GB1341864A - Field effect transistor method and device for compensating the gyromagnetic effect - Google Patents
Field effect transistor method and device for compensating the gyromagnetic effectInfo
- Publication number
- GB1341864A GB1341864A GB1341864DA GB1341864A GB 1341864 A GB1341864 A GB 1341864A GB 1341864D A GB1341864D A GB 1341864DA GB 1341864 A GB1341864 A GB 1341864A
- Authority
- GB
- United Kingdom
- Prior art keywords
- compensating
- gyromagnetic
- transistor method
- field effect
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002353 field-effect transistor method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2986171 | 1971-06-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1341864A true GB1341864A (en) | 1973-12-25 |
Family
ID=10298391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1341864D Expired GB1341864A (en) | 1971-06-25 | 1971-06-25 | Field effect transistor method and device for compensating the gyromagnetic effect |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE2229214A1 (en) |
| GB (1) | GB1341864A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56107583A (en) * | 1980-01-30 | 1981-08-26 | Matsushita Electric Ind Co Ltd | Field effect transistor |
-
1971
- 1971-06-25 GB GB1341864D patent/GB1341864A/en not_active Expired
-
1972
- 1972-06-15 DE DE19722229214 patent/DE2229214A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| DE2229214A1 (en) | 1972-12-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| 732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
| PE20 | Patent expired after termination of 20 years |