GB1336301A - Capacitor structure - Google Patents

Capacitor structure

Info

Publication number
GB1336301A
GB1336301A GB4777472A GB4777472A GB1336301A GB 1336301 A GB1336301 A GB 1336301A GB 4777472 A GB4777472 A GB 4777472A GB 4777472 A GB4777472 A GB 4777472A GB 1336301 A GB1336301 A GB 1336301A
Authority
GB
United Kingdom
Prior art keywords
layer
collector
polycrystalline
base
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4777472A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1336301A publication Critical patent/GB1336301A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H10D84/895—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
GB4777472A 1971-11-03 1972-10-17 Capacitor structure Expired GB1336301A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19535571A 1971-11-03 1971-11-03

Publications (1)

Publication Number Publication Date
GB1336301A true GB1336301A (en) 1973-11-07

Family

ID=22721111

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4777472A Expired GB1336301A (en) 1971-11-03 1972-10-17 Capacitor structure

Country Status (7)

Country Link
US (1) US3796928A (https=)
JP (1) JPS5218075B2 (https=)
CA (1) CA963169A (https=)
DE (1) DE2253614A1 (https=)
FR (1) FR2158281B1 (https=)
GB (1) GB1336301A (https=)
IT (1) IT967899B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4646119A (en) * 1971-01-14 1987-02-24 Rca Corporation Charge coupled circuits

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5426351B2 (https=) * 1973-12-25 1979-09-03
US3927468A (en) * 1973-12-28 1975-12-23 Fairchild Camera Instr Co Self aligned CCD element fabrication method therefor
US3931674A (en) * 1974-02-08 1976-01-13 Fairchild Camera And Instrument Corporation Self aligned CCD element including two levels of electrodes and method of manufacture therefor
US3911560A (en) * 1974-02-25 1975-10-14 Fairchild Camera Instr Co Method for manufacturing a semiconductor device having self-aligned implanted barriers with narrow gaps between electrodes
US3909925A (en) * 1974-05-06 1975-10-07 Telex Computer Products N-Channel charge coupled device fabrication process
US4096510A (en) * 1974-08-19 1978-06-20 Matsushita Electric Industrial Co., Ltd. Thermal printing head
US4019199A (en) * 1975-12-22 1977-04-19 International Business Machines Corporation Highly sensitive charge-coupled photodetector including an electrically isolated reversed biased diffusion region for eliminating an inversion layer
US4010482A (en) * 1975-12-31 1977-03-01 International Business Machines Corporation Non-volatile schottky barrier diode memory cell
US20120067391A1 (en) 2010-09-20 2012-03-22 Ming Liang Shiao Solar thermoelectric power generation system, and process for making same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4646119A (en) * 1971-01-14 1987-02-24 Rca Corporation Charge coupled circuits

Also Published As

Publication number Publication date
IT967899B (it) 1974-03-11
FR2158281B1 (https=) 1974-08-19
JPS4858782A (https=) 1973-08-17
JPS5218075B2 (https=) 1977-05-19
DE2253614B2 (https=) 1980-09-25
FR2158281A1 (https=) 1973-06-15
CA963169A (en) 1975-02-18
DE2253614A1 (de) 1973-05-10
US3796928A (en) 1974-03-12

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee