GB1334567A - Electronic switch - Google Patents
Electronic switchInfo
- Publication number
- GB1334567A GB1334567A GB4697671A GB4697671A GB1334567A GB 1334567 A GB1334567 A GB 1334567A GB 4697671 A GB4697671 A GB 4697671A GB 4697671 A GB4697671 A GB 4697671A GB 1334567 A GB1334567 A GB 1334567A
- Authority
- GB
- United Kingdom
- Prior art keywords
- channel
- channels
- doping
- oct
- control electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000010849 ion bombardment Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
Abstract
1334567 Semi-conductor switching circuits INTERNATIONAL BUSINESS MACHINES CORP 8 Oct 1971 [30 Oct 1970] 46976/71 Heading H3T [Also in Division H1] A switching circuit (Fig. 3) with a characteristic resembling that of a PNPN switch consists of a pair of cross-coupled FETs as shown. An equivalent arrangement comprises a pair of conductive channels of opposite conductivity type each of which acts as a gate for the other, the drain of each channel being connected via a load to the source of the other and a control electrode attached to one of the drains. In one embodiment the loads are resistors. In another, in which an insulating layer may be disposed between the channels, they are diodes while in the preferred embodiment they are Schottky diodes which may be integrated with the field effect element as shown in Fig. 7. The P channel is formed by diffusion into an N layer epitaxially deposited on a highly resistive substrate. To optimize the switching characteristic, the channel thicknesses d 1 , d 2 and doping should be equal. Doping equality can be achieved by ion bombardment while the thickness d 1 may be adjusted by a continuously monitored etching step. Aluminium and gold are deposited as shown to form ohmic contact to the N and P channel respectively and Schottky contact to the other channel, while an aluminium control electrode is provided on the N layer. Both channels are switched from the off to the on state by a pulse which forward biases the gate junction, reversion occurring when the current falls below a holding value.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1607470A CH515659A (en) | 1970-10-30 | 1970-10-30 | Controllable, electronic switch with a field effect semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1334567A true GB1334567A (en) | 1973-10-24 |
Family
ID=4414248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4697671A Expired GB1334567A (en) | 1970-10-30 | 1971-10-08 | Electronic switch |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5233948B1 (en) |
CA (1) | CA922815A (en) |
CH (1) | CH515659A (en) |
DE (1) | DE2150978C2 (en) |
FR (1) | FR2109787A5 (en) |
GB (1) | GB1334567A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111510124A (en) * | 2020-03-20 | 2020-08-07 | 中国工程物理研究院流体物理研究所 | Magnetic bias weak light triggering high-power photoconductive switch |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL298671A (en) * | 1963-10-01 |
-
1970
- 1970-10-30 CH CH1607470A patent/CH515659A/en not_active IP Right Cessation
-
1971
- 1971-09-16 FR FR7133818A patent/FR2109787A5/fr not_active Expired
- 1971-10-08 GB GB4697671A patent/GB1334567A/en not_active Expired
- 1971-10-13 DE DE19712150978 patent/DE2150978C2/en not_active Expired
- 1971-10-20 CA CA125581A patent/CA922815A/en not_active Expired
- 1971-10-27 JP JP8472971A patent/JPS5233948B1/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111510124A (en) * | 2020-03-20 | 2020-08-07 | 中国工程物理研究院流体物理研究所 | Magnetic bias weak light triggering high-power photoconductive switch |
CN111510124B (en) * | 2020-03-20 | 2023-03-24 | 中国工程物理研究院流体物理研究所 | Magnetic bias weak light triggering high-power photoconductive switch |
Also Published As
Publication number | Publication date |
---|---|
DE2150978C2 (en) | 1982-05-13 |
JPS5233948B1 (en) | 1977-08-31 |
FR2109787A5 (en) | 1972-05-26 |
CH515659A (en) | 1971-11-15 |
CA922815A (en) | 1973-03-13 |
DE2150978A1 (en) | 1972-05-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |