GB1334567A - Electronic switch - Google Patents

Electronic switch

Info

Publication number
GB1334567A
GB1334567A GB4697671A GB4697671A GB1334567A GB 1334567 A GB1334567 A GB 1334567A GB 4697671 A GB4697671 A GB 4697671A GB 4697671 A GB4697671 A GB 4697671A GB 1334567 A GB1334567 A GB 1334567A
Authority
GB
United Kingdom
Prior art keywords
channel
channels
doping
oct
control electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4697671A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1334567A publication Critical patent/GB1334567A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

1334567 Semi-conductor switching circuits INTERNATIONAL BUSINESS MACHINES CORP 8 Oct 1971 [30 Oct 1970] 46976/71 Heading H3T [Also in Division H1] A switching circuit (Fig. 3) with a characteristic resembling that of a PNPN switch consists of a pair of cross-coupled FETs as shown. An equivalent arrangement comprises a pair of conductive channels of opposite conductivity type each of which acts as a gate for the other, the drain of each channel being connected via a load to the source of the other and a control electrode attached to one of the drains. In one embodiment the loads are resistors. In another, in which an insulating layer may be disposed between the channels, they are diodes while in the preferred embodiment they are Schottky diodes which may be integrated with the field effect element as shown in Fig. 7. The P channel is formed by diffusion into an N layer epitaxially deposited on a highly resistive substrate. To optimize the switching characteristic, the channel thicknesses d 1 , d 2 and doping should be equal. Doping equality can be achieved by ion bombardment while the thickness d 1 may be adjusted by a continuously monitored etching step. Aluminium and gold are deposited as shown to form ohmic contact to the N and P channel respectively and Schottky contact to the other channel, while an aluminium control electrode is provided on the N layer. Both channels are switched from the off to the on state by a pulse which forward biases the gate junction, reversion occurring when the current falls below a holding value.
GB4697671A 1970-10-30 1971-10-08 Electronic switch Expired GB1334567A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1607470A CH515659A (en) 1970-10-30 1970-10-30 Controllable, electronic switch with a field effect semiconductor element

Publications (1)

Publication Number Publication Date
GB1334567A true GB1334567A (en) 1973-10-24

Family

ID=4414248

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4697671A Expired GB1334567A (en) 1970-10-30 1971-10-08 Electronic switch

Country Status (6)

Country Link
JP (1) JPS5233948B1 (en)
CA (1) CA922815A (en)
CH (1) CH515659A (en)
DE (1) DE2150978C2 (en)
FR (1) FR2109787A5 (en)
GB (1) GB1334567A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111510124A (en) * 2020-03-20 2020-08-07 中国工程物理研究院流体物理研究所 Magnetic bias weak light triggering high-power photoconductive switch

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL298671A (en) * 1963-10-01

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111510124A (en) * 2020-03-20 2020-08-07 中国工程物理研究院流体物理研究所 Magnetic bias weak light triggering high-power photoconductive switch
CN111510124B (en) * 2020-03-20 2023-03-24 中国工程物理研究院流体物理研究所 Magnetic bias weak light triggering high-power photoconductive switch

Also Published As

Publication number Publication date
CA922815A (en) 1973-03-13
DE2150978C2 (en) 1982-05-13
FR2109787A5 (en) 1972-05-26
CH515659A (en) 1971-11-15
DE2150978A1 (en) 1972-05-04
JPS5233948B1 (en) 1977-08-31

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee