GB1322147A - Lasers including crystals of group iii-vi semiconductor compounds - Google Patents
Lasers including crystals of group iii-vi semiconductor compoundsInfo
- Publication number
- GB1322147A GB1322147A GB858072A GB858072A GB1322147A GB 1322147 A GB1322147 A GB 1322147A GB 858072 A GB858072 A GB 858072A GB 858072 A GB858072 A GB 858072A GB 1322147 A GB1322147 A GB 1322147A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- output
- similar
- laser
- polarized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title abstract 6
- 150000001875 compounds Chemical class 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 229910005543 GaSe Inorganic materials 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 2
- CYRGZAAAWQRSMF-UHFFFAOYSA-N aluminium selenide Chemical compound [Al+3].[Al+3].[Se-2].[Se-2].[Se-2] CYRGZAAAWQRSMF-UHFFFAOYSA-N 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- 239000002019 doping agent Substances 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052725 zinc Inorganic materials 0.000 abstract 2
- 239000011701 zinc Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 abstract 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- 239000004519 grease Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000004943 liquid phase epitaxy Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000010445 mica Substances 0.000 abstract 1
- 229910052618 mica group Inorganic materials 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 238000001429 visible spectrum Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12368071A | 1971-03-12 | 1971-03-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1322147A true GB1322147A (en) | 1973-07-04 |
Family
ID=22410186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB858072A Expired GB1322147A (en) | 1971-03-12 | 1972-02-24 | Lasers including crystals of group iii-vi semiconductor compounds |
Country Status (7)
| Country | Link |
|---|---|
| BE (1) | BE780309A (enrdf_load_stackoverflow) |
| CA (1) | CA964356A (enrdf_load_stackoverflow) |
| CH (1) | CH546013A (enrdf_load_stackoverflow) |
| DE (1) | DE2211160A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2128838B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1322147A (enrdf_load_stackoverflow) |
| IT (1) | IT952218B (enrdf_load_stackoverflow) |
-
1971
- 1971-09-20 CA CA123,223A patent/CA964356A/en not_active Expired
-
1972
- 1972-02-24 GB GB858072A patent/GB1322147A/en not_active Expired
- 1972-03-02 CH CH546013D patent/CH546013A/xx not_active IP Right Cessation
- 1972-03-07 BE BE780309A patent/BE780309A/xx unknown
- 1972-03-08 DE DE19722211160 patent/DE2211160A1/de active Pending
- 1972-03-10 FR FR7208472A patent/FR2128838B1/fr not_active Expired
- 1972-03-11 IT IT4892772A patent/IT952218B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| FR2128838B1 (enrdf_load_stackoverflow) | 1974-08-02 |
| FR2128838A1 (enrdf_load_stackoverflow) | 1972-10-20 |
| IT952218B (it) | 1973-07-20 |
| DE2211160A1 (de) | 1972-09-28 |
| BE780309A (fr) | 1972-07-03 |
| CH546013A (enrdf_load_stackoverflow) | 1974-02-15 |
| CA964356A (en) | 1975-03-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3270476B2 (ja) | オーミックコンタクト及びii−vi族化合物半導体素子並びにこれらの製造方法 | |
| Acharya | Group III–nitride semiconductors: preeminent materials for modern electronic and optoelectronic applications | |
| US3484713A (en) | Two-stage semiconductor coherent radiation source | |
| US3986194A (en) | Magnetic semiconductor device | |
| US5113233A (en) | Compound semiconductor luminescent device | |
| US3677836A (en) | Liquid epitaxy method of fabricating controlled band gap gaal as electroluminescent devices | |
| Maremyanin et al. | Terahertz injection lasers based on a PbSnSe solid solution with an emission wavelength up to 50 μm and their application in the magnetospectroscopy of semiconductors | |
| US3495140A (en) | Light-emitting diodes and method of making same | |
| US3514715A (en) | Multilayer,light-emitting semiconductor device | |
| Neuberger | III-V ternary semiconducting compounds-data tables | |
| GB1228989A (enrdf_load_stackoverflow) | ||
| US3600240A (en) | Epitaxial growth from solution with amphoteric dopant | |
| US4606780A (en) | Method for the manufacture of A3 B5 light-emitting diodes | |
| JPS582081A (ja) | 発光ダイオ−ド | |
| US3927385A (en) | Light emitting diode | |
| Nuese et al. | Room‐temperature laser operation of In x Ga1− x As p‐n junctions | |
| GB1322147A (en) | Lasers including crystals of group iii-vi semiconductor compounds | |
| Wieder et al. | Minority carrier lifetime in InAs epilayers | |
| Nuese et al. | Efficient 1.06-µm emission from In x Ga 1-x As electroluminescent diodes | |
| Dolginov et al. | Multicomponent semiconductor solid solutions and their laserapplications | |
| Hesse et al. | Lead salt laser diodes | |
| Wu et al. | An overview of HgCdTe MBE technology | |
| US3417246A (en) | Frequency modulated semiconductor junction laser | |
| Butler et al. | Properties of the PbSe diode laser | |
| Butler et al. | Bismuth-doped Pb 1-x Sn x Te diode lasers with low-threshold currents |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |