GB1279167A - Method of manufacturing beam lead integrated circuits - Google Patents
Method of manufacturing beam lead integrated circuitsInfo
- Publication number
- GB1279167A GB1279167A GB4441970A GB4441970A GB1279167A GB 1279167 A GB1279167 A GB 1279167A GB 4441970 A GB4441970 A GB 4441970A GB 4441970 A GB4441970 A GB 4441970A GB 1279167 A GB1279167 A GB 1279167A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafer
- etched
- layer
- silicon
- sandwich
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
1279167 Integrated semi-conductor devices ITT INDUSTRIES Inc 17 Sept 1970 [22 Sept 1969] 44419/70 Heading H1K A beam lead integrated circuit device is fabricated on a sandwich of a silicon substrate covered with aluminosilicate glass frit 2 in alcoholic suspension overlaid by a silicon wafer 3a the sandwich being placed between carbon susceptors of an hydraulic press and RF induction heated to 1200‹ C. under 1200 p.s.i., after which it is cooled under pressure. The wafer may alternatively be of germanium or gallium arsenide. It is parallel lapped or etched and polished to ¢ mil, and formed with a number of active or passive electrical components 4 by known photolitho masking, diffusion and deposition techniques. Alternatively the components may be preformed in the wafer, which is then applied to the substrate over a low temperature glaze and heated to a softening point lower than the diffusion temperature. A passivation layer 5 of evaporated silicon dioxide or RF glow discharge deposited silicon nitride is formed on the wafer, and holes are etched with NH 4 F + HF to expose terminals of the discrete components, and a metallized layer of e.g. aluminium is deposited by electron beam or filamentary evaporation or glow discharge. The required interconnecting lead pattern is formed by selectively etching with, e.g. NaOH through photoresist. Alternatively the lead pattern may be of a sandwich of Pt, Ti and Au in that order. Layer 5 is etched through photoresist with NH 4 F + HF to remove a portion surrounding each component, and abutting the leads 6. The exposed wafer surface is etched using HF+ HNO 3 + CH 3 .COOH to remove the exposed silicon to the glass layer and to undercut leads 6 without penetrating sufficiently under layer 5 to damage the components, which are thus isolated. The substrate may be divided using known scribing methods into separate integrated circuit devices.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US85992869A | 1969-09-22 | 1969-09-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1279167A true GB1279167A (en) | 1972-06-28 |
Family
ID=25332077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4441970A Expired GB1279167A (en) | 1969-09-22 | 1970-09-17 | Method of manufacturing beam lead integrated circuits |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE2041819A1 (en) |
FR (1) | FR2062952B3 (en) |
GB (1) | GB1279167A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2221092A (en) * | 1988-07-19 | 1990-01-24 | Tektronix Inc | "a semiconductor integrated circuit with temperature sensor" |
WO2004059474A2 (en) * | 2002-12-20 | 2004-07-15 | Applied Materials, Inc. | Micromachined intergrated fluid delivery system |
US7798388B2 (en) | 2007-05-31 | 2010-09-21 | Applied Materials, Inc. | Method of diffusion bonding a fluid flow apparatus |
-
1970
- 1970-08-22 DE DE19702041819 patent/DE2041819A1/en active Pending
- 1970-09-17 GB GB4441970A patent/GB1279167A/en not_active Expired
- 1970-09-22 FR FR7034224A patent/FR2062952B3/fr not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2221092A (en) * | 1988-07-19 | 1990-01-24 | Tektronix Inc | "a semiconductor integrated circuit with temperature sensor" |
GB2221092B (en) * | 1988-07-19 | 1992-06-03 | Tektronix Inc | Integrated circuit and method of treating an integrated circuit |
WO2004059474A2 (en) * | 2002-12-20 | 2004-07-15 | Applied Materials, Inc. | Micromachined intergrated fluid delivery system |
WO2004059474A3 (en) * | 2002-12-20 | 2004-11-25 | Applied Materials Inc | Micromachined intergrated fluid delivery system |
US7448276B2 (en) | 2002-12-20 | 2008-11-11 | Applied Materials, Inc. | Capacitance dual electrode pressure sensor in a diffusion bonded layered substrate |
US7459003B2 (en) | 2002-12-20 | 2008-12-02 | Applied Materials, Inc. | In-line filter in a diffusion bonded layered substrate |
US7798388B2 (en) | 2007-05-31 | 2010-09-21 | Applied Materials, Inc. | Method of diffusion bonding a fluid flow apparatus |
Also Published As
Publication number | Publication date |
---|---|
DE2041819A1 (en) | 1971-04-22 |
FR2062952B3 (en) | 1973-06-08 |
FR2062952A7 (en) | 1971-07-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
435 | Patent endorsed 'licences of right' on the date specified (sect. 35/1949) | ||
PLNP | Patent lapsed through nonpayment of renewal fees |