GB1273801A - Radiant energy amplifier - Google Patents
Radiant energy amplifierInfo
- Publication number
- GB1273801A GB1273801A GB1529169A GB1529169A GB1273801A GB 1273801 A GB1273801 A GB 1273801A GB 1529169 A GB1529169 A GB 1529169A GB 1529169 A GB1529169 A GB 1529169A GB 1273801 A GB1273801 A GB 1273801A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- phosphor
- electrode
- sulfide
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 4
- 229910052984 zinc sulfide Inorganic materials 0.000 abstract 3
- 229910021591 Copper(I) chloride Inorganic materials 0.000 abstract 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 abstract 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 abstract 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- BKQMNPVDJIHLPD-UHFFFAOYSA-N OS(=O)(=O)[Se]S(O)(=O)=O Chemical compound OS(=O)(=O)[Se]S(O)(=O)=O BKQMNPVDJIHLPD-UHFFFAOYSA-N 0.000 abstract 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 239000005083 Zinc sulfide Substances 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- CUGMJFZCCDSABL-UHFFFAOYSA-N arsenic(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[As+3].[As+3] CUGMJFZCCDSABL-UHFFFAOYSA-N 0.000 abstract 1
- 239000011230 binding agent Substances 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 238000005286 illumination Methods 0.000 abstract 1
- 229910000464 lead oxide Inorganic materials 0.000 abstract 1
- 229910052981 lead sulfide Inorganic materials 0.000 abstract 1
- 229940056932 lead sulfide Drugs 0.000 abstract 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 abstract 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 239000011669 selenium Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052717 sulfur Inorganic materials 0.000 abstract 1
- 239000011593 sulfur Substances 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 239000011135 tin Substances 0.000 abstract 1
- -1 trisulfide Chemical compound 0.000 abstract 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Luminescent Compositions (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
1,273,801. Electroluminescence. XEROX CORP. 24 March, 1969 [25 March, 1968; 6 May, 1968], No. 15291/69. Heading C4S. A radiant energy amplifier comprises at least one pair of energizing electrodes, electroluminescent phosphor 17 (e.g. 1 mm. thick) in contact with at least one electrode 16 of the or each pair, a field effect semi-conductor 14 either in contact with the other electrode pair or separated from same only by the phosphor (Fig. 3, not shown), photoconductive layer 13 in contact with the f.e.s.c. surface about which surface charges are trapped and control the charge flow, and means to apply charge to the photoconductive layer, such as electrode 12 or a corona discharge source. Layer 17 may be D.C. phosphor of CuCl and Mn activated ZnS or A.C. phosphor of CuCl activated ZnS as in Fig. 3 while layer 14 may be P- or N-type and of Si, Ge, CdS, CdSe, or ZnO. Layer 12 may be an oxide of copper or tin, copper iodide or gold, while layer 13 may be homogeneous or p.c. particles in a binder and with dopants and may include sulfur, anthracene, selenium, arsenic-sulfide, antimony, trisulfide, cadmium sulfide, cadmium selenide or sulfoselenide, lead oxide, lead sulfide, polyvinylcarbazole, phthalocyanine quinacridones, and zinc sulfide and be of 1 to 100 Á e.g. 25 to 50 thickness. Conductors 16 may be 10 mms. wide at 20 mms. interval. Positive or negative images with selective erasure may be attained with X-ray, visible, U.V. or infra-red inputs and a uniform flooding stage may be included. The f.e.s.c. such as N type ZnO may also be photoconductive and sensitive to violet light but insensitive to yellow light while an organic p.c. layer responses are the opposite. Yellow light flooding on the negative p.c. effects uniform darkening, a violet input effects a positive image and selective erasure may be achieved by yellow illumination in the required areas on negative potential electrode 12. Variations are described and graded light intensity images are possible. Reference has been directed by the Comptroller to Specification 1,201,374.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71580768A | 1968-03-25 | 1968-03-25 | |
| US72810268A | 1968-05-06 | 1968-05-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1273801A true GB1273801A (en) | 1972-05-10 |
Family
ID=27109422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1529169A Expired GB1273801A (en) | 1968-03-25 | 1969-03-24 | Radiant energy amplifier |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1914912C3 (en) |
| GB (1) | GB1273801A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2946108C2 (en) * | 1979-11-15 | 1985-02-14 | Koch & Sterzel Gmbh & Co, 4300 Essen | Radiation detector |
-
1969
- 1969-03-24 GB GB1529169A patent/GB1273801A/en not_active Expired
- 1969-03-24 DE DE19691914912 patent/DE1914912C3/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1914912A1 (en) | 1969-10-09 |
| DE1914912B2 (en) | 1974-04-18 |
| DE1914912C3 (en) | 1974-11-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |