GB1269465A - Improvements in or relating to memory matrices and the production thereof - Google Patents

Improvements in or relating to memory matrices and the production thereof

Info

Publication number
GB1269465A
GB1269465A GB00739/70A GB1073970A GB1269465A GB 1269465 A GB1269465 A GB 1269465A GB 00739/70 A GB00739/70 A GB 00739/70A GB 1073970 A GB1073970 A GB 1073970A GB 1269465 A GB1269465 A GB 1269465A
Authority
GB
United Kingdom
Prior art keywords
lamellμ
memory
bands
layers
notches
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB00739/70A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bull SA
Original Assignee
Societe Industrielle Honeywell Bull
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Industrielle Honeywell Bull filed Critical Societe Industrielle Honeywell Bull
Publication of GB1269465A publication Critical patent/GB1269465A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
    • G11C29/832—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption with disconnection of faulty elements

Landscapes

  • Semiconductor Memories (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

1,269,465. Read only memory. SOC. INDUSTRIELLE HONEYWELL BULL. 5 March, 1970 [6 March, 1969], No. 10739/70. Heading G4A. [Also in Division H1] The invention relates to a read only memory and to a process for fabricating a memory matrix. An insulating support 1 is coated with a uniform resistive layer 20 and then with a first conductive layer 21. A series of parallel notch pairs 22, 23 is cut through the two layers to form a rectangular mesh pattern and an insulating plate 14 is placed between each pair to overlap the notches. The plate may be a varnish uniformly deposited and cut by photo engraving. A further conductive layer is added and the three layers are etched to provide orthogonal bands 2, 3 and resistive lamellµ 5 connecting bands 2 and 3, bands 2 being formed by the layers situated between the notches and by the portions connecting these layers. Notches are cut in the top layer of bands 2 adjacent the cross-over points with bands 3. The memory may be covered with a photosensitive lacquer having windows partially exposing the lamellµ, selective lamellµ may be masked and the remaining lamellµ etched away to provide the memory. The lamellµ may have fusible portions situated between enlarged pads so that selected lamellµ may be destroyed by passing large currents through the fusible portions.
GB00739/70A 1969-03-06 1970-03-05 Improvements in or relating to memory matrices and the production thereof Expired GB1269465A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR6906298A FR2036207A5 (en) 1969-03-06 1969-03-06

Publications (1)

Publication Number Publication Date
GB1269465A true GB1269465A (en) 1972-04-06

Family

ID=9030226

Family Applications (1)

Application Number Title Priority Date Filing Date
GB00739/70A Expired GB1269465A (en) 1969-03-06 1970-03-05 Improvements in or relating to memory matrices and the production thereof

Country Status (4)

Country Link
US (1) US3713885A (en)
DE (1) DE2010264A1 (en)
FR (1) FR2036207A5 (en)
GB (1) GB1269465A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4112496A (en) * 1974-12-13 1978-09-05 Sanders Associates, Inc. Capacitor matrix correlator for use in the correlation of periodic signals
US6768150B1 (en) * 2003-04-17 2004-07-27 Infineon Technologies Aktiengesellschaft Magnetic memory
US20050018495A1 (en) * 2004-01-29 2005-01-27 Netlist, Inc. Arrangement of integrated circuits in a memory module

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3055775A (en) * 1960-06-10 1962-09-25 Space Technology Lab Inc Superconductive switching component
US3366519A (en) * 1964-01-20 1968-01-30 Texas Instruments Inc Process for manufacturing multilayer film circuits
GB1143957A (en) * 1965-07-13 1969-02-26 Int Computers Ltd Improvements in or relating to electrical circuit structures
US3540954A (en) * 1966-12-30 1970-11-17 Texas Instruments Inc Method for manufacturing multi-layer film circuits

Also Published As

Publication number Publication date
FR2036207A5 (en) 1970-12-24
DE2010264A1 (en) 1970-09-24
US3713885A (en) 1973-01-30

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