GB1259069A - - Google Patents

Info

Publication number
GB1259069A
GB1259069A GB1259069DA GB1259069A GB 1259069 A GB1259069 A GB 1259069A GB 1259069D A GB1259069D A GB 1259069DA GB 1259069 A GB1259069 A GB 1259069A
Authority
GB
United Kingdom
Prior art keywords
region
type
collector
diffused
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1259069A publication Critical patent/GB1259069A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004Base region of bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821Collector regions of bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
GB1259069D 1969-06-24 1970-06-17 Expired GB1259069A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT1859369 1969-06-24

Publications (1)

Publication Number Publication Date
GB1259069A true GB1259069A (de) 1972-01-05

Family

ID=11153025

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1259069D Expired GB1259069A (de) 1969-06-24 1970-06-17

Country Status (4)

Country Link
DE (1) DE2030284A1 (de)
FR (1) FR2047906A1 (de)
GB (1) GB1259069A (de)
NL (1) NL7007396A (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0012545A1 (de) * 1978-12-04 1980-06-25 Western Electric Company, Incorporated Integrierte Halbleiterschaltung und Verfahren zu ihrer Herstellung
EP0038697B1 (de) * 1980-04-22 1984-12-12 Semiconductor Research Foundation Halbleiter-Bildsensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0012545A1 (de) * 1978-12-04 1980-06-25 Western Electric Company, Incorporated Integrierte Halbleiterschaltung und Verfahren zu ihrer Herstellung
EP0038697B1 (de) * 1980-04-22 1984-12-12 Semiconductor Research Foundation Halbleiter-Bildsensor

Also Published As

Publication number Publication date
NL7007396A (de) 1970-12-29
FR2047906A1 (de) 1971-03-19
DE2030284A1 (de) 1971-01-28

Similar Documents

Publication Publication Date Title
GB1116384A (en) Semiconductor device
GB1153428A (en) Improvements in Semiconductor Devices.
GB1155578A (en) Field Effect Transistor
GB1301345A (de)
GB1280022A (en) Improvements in and relating to semiconductor devices
GB1470211A (en) Semiconductor devices
GB1357432A (en) Semiconductor devices
GB1291383A (en) Improvements in and relating to semiconductor devices
GB1159937A (en) Improvements in or relating to Semiconductor Devices.
GB1148417A (en) Integrated circuit structures including controlled rectifiers or their structural equivalents and method of making the same
GB1073551A (en) Integrated circuit comprising a diode and method of making the same
GB1060208A (en) Avalanche transistor
GB949646A (en) Improvements in or relating to semiconductor devices
GB983266A (en) Semiconductor switching devices
GB1369357A (en) Semiconductive devices
GB1334745A (en) Semiconductor devices
GB1073135A (en) Semiconductor current limiter
GB1259069A (de)
GB1242006A (en) Improvements in and relating to semiconductor radiation-detectors
GB1287247A (en) Improved semiconductor device with high junction breakdown voltage and method of manufacture
GB1245765A (en) Surface diffused semiconductor devices
GB1219660A (en) Integrated semiconductor circuits
GB1071357A (en) Semiconductor switch
GB1270498A (en) Semiconductor devices
GB1127161A (en) Improvements in or relating to diffused base transistors

Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees