GB1259069A - - Google Patents
Info
- Publication number
- GB1259069A GB1259069A GB1259069DA GB1259069A GB 1259069 A GB1259069 A GB 1259069A GB 1259069D A GB1259069D A GB 1259069DA GB 1259069 A GB1259069 A GB 1259069A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- type
- collector
- diffused
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 230000015556 catabolic process Effects 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT1859369 | 1969-06-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1259069A true GB1259069A (de) | 1972-01-05 |
Family
ID=11153025
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1259069D Expired GB1259069A (de) | 1969-06-24 | 1970-06-17 |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE2030284A1 (de) |
FR (1) | FR2047906A1 (de) |
GB (1) | GB1259069A (de) |
NL (1) | NL7007396A (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0012545A1 (de) * | 1978-12-04 | 1980-06-25 | Western Electric Company, Incorporated | Integrierte Halbleiterschaltung und Verfahren zu ihrer Herstellung |
EP0038697B1 (de) * | 1980-04-22 | 1984-12-12 | Semiconductor Research Foundation | Halbleiter-Bildsensor |
-
1970
- 1970-05-22 NL NL7007396A patent/NL7007396A/xx unknown
- 1970-06-17 GB GB1259069D patent/GB1259069A/en not_active Expired
- 1970-06-19 DE DE19702030284 patent/DE2030284A1/de active Pending
- 1970-06-23 FR FR7023202A patent/FR2047906A1/fr not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0012545A1 (de) * | 1978-12-04 | 1980-06-25 | Western Electric Company, Incorporated | Integrierte Halbleiterschaltung und Verfahren zu ihrer Herstellung |
EP0038697B1 (de) * | 1980-04-22 | 1984-12-12 | Semiconductor Research Foundation | Halbleiter-Bildsensor |
Also Published As
Publication number | Publication date |
---|---|
NL7007396A (de) | 1970-12-29 |
FR2047906A1 (de) | 1971-03-19 |
DE2030284A1 (de) | 1971-01-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees |