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H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
H01S5/00—Semiconductor lasers
H01S5/30—Structure or shape of the active region; Materials used for the active region
Effect of temperature on the spectrum and the threshold current of epitaxial injection lasers based on GaAs(Photon generation threshold energy temperature dependence for GaAs epitaxial injection lasers)
Influence of radiative noise of the lasing threshold of an injection laser(Radiative noise effect on threshold current, output power and quantum yield of injection laser, evaluating noise loss factor)
Modulation of a helium-neon laser by a medium-power microwave beam(Microwave modulation of helium-neon laser intensity studied as function of temperature and electron density)
Intensity fluctuations and correlations in a GaAs laser(Correlations and intensity fluctuations in light from individual lasing and nonlasing modes of CW GAAS laser and threshold noise change in laser emission)
Effect of the surface on the characteristics of injection-type semiconductor lasers(Surface effect on temperature, I-V and watt- ampere characteristics of p-n junction semiconductor injection laser diode as coherent light source)
Mode locking in ruby lasers in free emission operation(Ultrashort light pulse emission during mode locking in ruby lasers in free emission operation, examining first spike radiation)
Properties of PbSe laser diodes at 77 K(Stimulated recombination radiation from PbSe laser diodes at 77 K, showing stepwise curve of emission power vs pumping current)
Time characteristics of a GaAs p-n junction laser(Delay time dependence between current and light in GaAs semiconductor laser on additives concentrations and p-n junction region size)
Modulation and synchronization of the emission of a semiconductor injection laser(HF modulation and synchronization of GaAs semiconductor injection laser diodes emission by diffusion method)
The generation of high current pulses of short duration for use with gallium arsenide lamps and lasers(High current pulse generation for gallium arsenide lamps and lasers by solid state circuit, using Shockley diode and Schmitt trigger)
Effect of a longitudinal magnetic field on the output power of an He-Ne laser(Pulsed emission and modulation of output power of He-Ne laser at 0. 63 and 1. 15 micron wavelengths as function of external longitudinal magnetic field)
Influence of irradiation on the main characteristics of a gallium arsenide semiconductor laser excited by an electron beam(Irradiation influence on emission power of GaAs laser excited by high energy electron beam)
Luminous intensity emitted by a gas or an alkaline vapor under the effect of a focused laser emission(Luminous intensity emitted at interaction time of focused laser beam with argon of cesium vapor in avalanche and breakdown regions)
Line shape and the through width of the gain curve of an He-Ne laser at the wavelength of 0. 63 mu(He-Ne laser transition line shape and gain curve through width, considering spectral frequency characteristics, output power and gas temperature and concentration)
Effects of high energy electron irradiation on recombination radiation spectra of GaP and GaAs sub x P sub 1 minus x/x equals 0. 70, 0. 54/(Effects of high energy electron irradiation on recombination radiation spectra of gallium phosphide and gallium arsenide)
Gaas injection laser(Spectral characteristics, temperature dependence and continuous wave operation of stimulated emission in gallium arsenide p-n junction laser)
Recent developments in coherent optics technology(Coherent optics technology, presenting effective black body temperature of six radiation sources and output and pulse duration of four laser sources)
Properties of an electron source with laser induced electron emission(Measurements of emittance of pulsed electron source with laser-induced electron emission)
Influence of the surface on the characteristics of injection semiconductor lasers(Surface effect on temperature, I-V and watt- ampere characteristics of p-n junction semiconductor injection laser diode as coherent light source)