GB1246858A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1246858A
GB1246858A GB376369A GB376369A GB1246858A GB 1246858 A GB1246858 A GB 1246858A GB 376369 A GB376369 A GB 376369A GB 376369 A GB376369 A GB 376369A GB 1246858 A GB1246858 A GB 1246858A
Authority
GB
United Kingdom
Prior art keywords
nickel
aluminium
instead
jan
cobalt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB376369A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB1246858A publication Critical patent/GB1246858A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)

Abstract

1,246,858. Semi-conductor devices. MITSUBISHI DENKI K.K. 23 Jan., 1969 [23 Jan., 1968], No. 3763/69. Heading H1K. The silicon PNN+ diode 18 is provided with evaporated and sintered ohmic aluminium contacts 24, 26 and is held in pressure contact between two flat tungsten support plates 34, 38 which may be aluminium faced 36, 40. This assembly is held between metal blocks 56, 70 forming part of a sealed housing also comprising a ceramic ring 52 with iron-cobalt-nickel flanges 58, 62 hard-soldered thereto and a resilient flange 72 argon-arc welded to the flange 62. The resilient flange may supply the necessary contact pressure in the system but external pressure may also be applied. The ohmic contacts may instead consist of other ductile metals, such as gold, silver or nickel; the support plates (which may be faced with the metal of the ohmic contacts) may instead be of molybdenum, tantalum, or iron-cobalt-nickel; the semi-conductor may instead be germanium or an A<SP>III</SP>B<SP>V</SP> compound; the body is strengthened by, e.g., a silicon ring 28 aluminium bonded to the body. Before mounting, the body is peripherally sand-blasted and etched and siliconevarnished. Transistors and thyristors may be similarly mounted.
GB376369A 1968-01-23 1969-01-23 Semiconductor device Expired GB1246858A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP386668 1968-01-23

Publications (1)

Publication Number Publication Date
GB1246858A true GB1246858A (en) 1971-09-22

Family

ID=11569101

Family Applications (1)

Application Number Title Priority Date Filing Date
GB376369A Expired GB1246858A (en) 1968-01-23 1969-01-23 Semiconductor device

Country Status (5)

Country Link
CH (1) CH485323A (en)
DE (1) DE1903082B2 (en)
FR (1) FR2000604A1 (en)
GB (1) GB1246858A (en)
SE (1) SE354379B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1286393A2 (en) * 2001-06-28 2003-02-26 F &amp; K Delvotec Bondtechnik GmbH Circuit housing

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2559837C2 (en) * 1974-07-13 1985-01-17 Olympus Optical Co., Ltd., Tokio/Tokyo DC motor
FR2328286A1 (en) * 1975-10-14 1977-05-13 Thomson Csf PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICES WITH VERY LOW THERMAL RESISTANCE, AND DEVICES OBTAINED BY THIS PROCEDURE
JPS5678130A (en) * 1979-11-30 1981-06-26 Hitachi Ltd Semiconductor device and its manufacture

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1286393A2 (en) * 2001-06-28 2003-02-26 F &amp; K Delvotec Bondtechnik GmbH Circuit housing
EP1286393A3 (en) * 2001-06-28 2004-03-03 F &amp; K Delvotec Bondtechnik GmbH Circuit housing
US6891730B2 (en) * 2001-06-28 2005-05-10 F & K Delvotec Bondtechnik Gmbh Circuit housing

Also Published As

Publication number Publication date
DE1903082B2 (en) 1971-09-30
DE1903082A1 (en) 1969-07-31
SE354379B (en) 1973-03-05
FR2000604A1 (en) 1969-09-12
CH485323A (en) 1970-01-31

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