GB1242427A - Low saturation voltage transistor - Google Patents
Low saturation voltage transistorInfo
- Publication number
- GB1242427A GB1242427A GB4433868A GB4433868A GB1242427A GB 1242427 A GB1242427 A GB 1242427A GB 4433868 A GB4433868 A GB 4433868A GB 4433868 A GB4433868 A GB 4433868A GB 1242427 A GB1242427 A GB 1242427A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafer
- emitter
- regions
- region
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005299 abrasion Methods 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US66946067A | 1967-09-21 | 1967-09-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1242427A true GB1242427A (en) | 1971-08-11 |
Family
ID=24686398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4433868A Expired GB1242427A (en) | 1967-09-21 | 1968-09-18 | Low saturation voltage transistor |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR1580734A (de) |
| GB (1) | GB1242427A (de) |
-
1968
- 1968-09-18 GB GB4433868A patent/GB1242427A/en not_active Expired
- 1968-09-20 FR FR1580734D patent/FR1580734A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1580734A (de) | 1969-09-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1116384A (en) | Semiconductor device | |
| GB1050478A (de) | ||
| GB1280022A (en) | Improvements in and relating to semiconductor devices | |
| GB923513A (en) | Improvements in semiconductor devices | |
| GB1301345A (de) | ||
| GB1046152A (en) | Diode structure in semiconductor integrated circuit and method of making same | |
| GB1246208A (en) | Pn junction gated field effect transistor having buried layer | |
| GB1012123A (en) | Improvements in or relating to semiconductor devices | |
| GB1158897A (en) | Space-Charge-Limited Current Triode Device | |
| GB1073551A (en) | Integrated circuit comprising a diode and method of making the same | |
| GB1173919A (en) | Semiconductor Device with a pn-Junction | |
| GB1145121A (en) | Improvements in and relating to transistors | |
| GB983266A (en) | Semiconductor switching devices | |
| GB1334745A (en) | Semiconductor devices | |
| GB1154049A (en) | Improvements in or relating to Avalanche Diodes. | |
| GB1472113A (en) | Semiconductor device circuits | |
| GB1194752A (en) | Transistor | |
| GB1076371A (en) | Semiconductor device with auxiliary junction for enhancing breakdown voltage of primary junction | |
| GB1242427A (en) | Low saturation voltage transistor | |
| GB995700A (en) | Double epitaxial layer semiconductor structures | |
| GB1393536A (en) | Electroluminescent semiconductor devices | |
| GB1190876A (en) | Transistor | |
| US3683242A (en) | Semiconductor magnetic device | |
| US3504243A (en) | Low saturation voltage transistor with symmetrical structure | |
| GB1028485A (en) | Semiconductor devices |