GB1232000A - - Google Patents

Info

Publication number
GB1232000A
GB1232000A GB1232000DA GB1232000A GB 1232000 A GB1232000 A GB 1232000A GB 1232000D A GB1232000D A GB 1232000DA GB 1232000 A GB1232000 A GB 1232000A
Authority
GB
United Kingdom
Prior art keywords
stable
lines
read
voltage
voltage level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1232000A publication Critical patent/GB1232000A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
    • G11C11/4023—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using field effect transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
GB1232000D 1968-12-05 1969-11-06 Expired GB1232000A (US20110009641A1-20110113-C00185.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78152868A 1968-12-05 1968-12-05

Publications (1)

Publication Number Publication Date
GB1232000A true GB1232000A (US20110009641A1-20110113-C00185.png) 1971-05-12

Family

ID=25123024

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1232000D Expired GB1232000A (US20110009641A1-20110113-C00185.png) 1968-12-05 1969-11-06

Country Status (4)

Country Link
US (1) US3588846A (US20110009641A1-20110113-C00185.png)
JP (1) JPS5534519B1 (US20110009641A1-20110113-C00185.png)
FR (1) FR2025372A1 (US20110009641A1-20110113-C00185.png)
GB (1) GB1232000A (US20110009641A1-20110113-C00185.png)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH519251A (de) * 1970-07-01 1972-02-15 Ibm Integrierte Halbleiterschaltung zur Speicherung von Daten
US3662356A (en) * 1970-08-28 1972-05-09 Gen Electric Integrated circuit bistable memory cell using charge-pumped devices
US3736569A (en) * 1971-10-13 1973-05-29 Ibm System for controlling power consumption in a computer
US3706977A (en) * 1971-11-11 1972-12-19 Ibm Functional memory storage cell
US3747078A (en) * 1972-06-28 1973-07-17 Ibm Compensation technique for variations in bit line impedance
DE2309192C3 (de) * 1973-02-23 1975-08-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Regenerierschaltung nach Art eines getasteten Flipflops und Verfahren zum Betrieb einer solchen Regenerierschaltung
US3917960A (en) * 1974-01-31 1975-11-04 Signetics Corp MOS transistor logic circuit
US4118642A (en) * 1975-06-26 1978-10-03 Motorola, Inc. Higher density insulated gate field effect circuit
US4394751A (en) * 1980-10-23 1983-07-19 Standard Microsystems Corporation Low power storage cell
US4595978A (en) * 1982-09-30 1986-06-17 Automatic Power, Inc. Programmable control circuit for controlling the on-off operation of an indicator device

Also Published As

Publication number Publication date
FR2025372A1 (US20110009641A1-20110113-C00185.png) 1970-09-11
US3588846A (en) 1971-06-28
JPS5534519B1 (US20110009641A1-20110113-C00185.png) 1980-09-06

Similar Documents

Publication Publication Date Title
GB1253763A (en) Improvements in and relating to monolithic semiconductor data storage cells
GB1521099A (en) Semiconductor bistable data storage cells
GB1530139A (en) Semiconductor memory arrays
GB1407847A (en) Semkconductor data storage circuits
GB1485499A (en) Memory circuit
GB1232000A (US20110009641A1-20110113-C00185.png)
US3760380A (en) Silicon gate complementary mos dynamic ram
GB1464122A (en) Data storage apparatus
GB1092583A (en) Gated difference amplifier
GB1035737A (en) Improvements in or relating to sense amplifiers
GB1281808A (en) Associative stores
GB1369767A (en) Semiconductor memory
GB1162109A (en) Semi Conductor Data and Storage Devices and Data Stores Employing Such Devices
GB1315325A (en) Difference amplifier
GB1212955A (en) Bit storage cells
GB1431205A (en) Monolithic semiconductor circuit arrangement
GB1280924A (en) Data stores
GB1286307A (en) Circuits including schottky barrier diodes and methods of making them
GB1178807A (en) Electrical Bistable Circuit
GB1220000A (en) Associative memory
GB1086716A (en) Bistable circuit
GB1118054A (en) Computer memory circuits
GB849142A (en) Output devices for storage matrices
GB1334508A (en) Polarity hold latch
GB1253397A (en) Bit storage cells

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee