GB1185847A - Improvements in or relating to Magnetic Store Structures - Google Patents
Improvements in or relating to Magnetic Store StructuresInfo
- Publication number
- GB1185847A GB1185847A GB46100/67A GB4610067A GB1185847A GB 1185847 A GB1185847 A GB 1185847A GB 46100/67 A GB46100/67 A GB 46100/67A GB 4610067 A GB4610067 A GB 4610067A GB 1185847 A GB1185847 A GB 1185847A
- Authority
- GB
- United Kingdom
- Prior art keywords
- conductor
- bit
- layer
- magnetic
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Abstract
1,185,847. Magnetic storage apparatus. SOC. D'ELECTRONIQUE ET D'AUTOMATISME. 9 Oct., 1967 [7 Oct., 1966], No.- 46100/67. Heading H3B. In an anisotropic magnetic thin film store a soft magnetic block provided with parallel grooves is positioned over strips of thin film. A copper carrier 1 has deposited on it a layer of silicon monoxide 2 over which is deposited an anisotropic thin film layer 3 and a copper layer 4. By etching the layers 3, 4 strips are produced as shown which extend in the direction of the easy axis. A soft magnetic ferrite block 5 provided with parallel grooves 7 in which are insulated bit/sense lines 6 is positioned over the carrier 1. Each memory bit position is indicated at 8 and the magnetic circuit of each bit position is closed through soft magnetic material 5 surrounding the corresponding conductor 6, a portion of the conductor layer 4 and a portion of the magnetic layer 3. Information is written into a bit position by energizing the appropriate word conductor 4 and applying a longer coincident bit pulse to the corresponding bit/sense conductor 6. Read-out is performed by applying a read pulse to the appropriate word conductor 4 and sensing the induced signal in bit/sense conductor 6. Due to demagnetization of the portions 9 of a strip all memory points in a strip are distinct and since word strips are spaced from one another there is no propagation of information therebetween and creeping is avoided. Due to the grooves 7 creeping along a word line is also avoided. The anisotropic thin film 3 may be formed by two layers superimposed with the interposition of a film of non-magnetic material so that non- destructive read-out is obtained.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR79140A FR1520404A (en) | 1966-10-07 | 1966-10-07 | Advanced Thin Film Magnetic Memory |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1185847A true GB1185847A (en) | 1970-03-25 |
Family
ID=8618653
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB46100/67A Expired GB1185847A (en) | 1966-10-07 | 1967-10-09 | Improvements in or relating to Magnetic Store Structures |
Country Status (5)
Country | Link |
---|---|
BE (1) | BE702993A (en) |
DE (1) | DE1549051A1 (en) |
FR (1) | FR1520404A (en) |
GB (1) | GB1185847A (en) |
NL (1) | NL6713038A (en) |
-
1966
- 1966-10-07 FR FR79140A patent/FR1520404A/en not_active Expired
-
1967
- 1967-08-23 BE BE702993D patent/BE702993A/xx unknown
- 1967-09-25 NL NL6713038A patent/NL6713038A/xx unknown
- 1967-10-06 DE DE19671549051 patent/DE1549051A1/en active Pending
- 1967-10-09 GB GB46100/67A patent/GB1185847A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR1520404A (en) | 1968-04-12 |
BE702993A (en) | 1968-01-15 |
DE1549051A1 (en) | 1970-04-09 |
NL6713038A (en) | 1968-04-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |