GB1173416A - Solid State Relay Circuit - Google Patents

Solid State Relay Circuit

Info

Publication number
GB1173416A
GB1173416A GB3520868A GB3520868A GB1173416A GB 1173416 A GB1173416 A GB 1173416A GB 3520868 A GB3520868 A GB 3520868A GB 3520868 A GB3520868 A GB 3520868A GB 1173416 A GB1173416 A GB 1173416A
Authority
GB
United Kingdom
Prior art keywords
circuit
triac
terminal
thyristor scr
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3520868A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schneider Electric USA Inc
Original Assignee
Square D Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Square D Co filed Critical Square D Co
Publication of GB1173416A publication Critical patent/GB1173416A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/725Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for ac voltages or currents

Landscapes

  • Electronic Switches (AREA)

Abstract

1,173,416. Control systems for consuming apparatus. SQUARE D CO. 24 July, 1968 [6 Sept., 1967], No. 35208/68. Heading H2H. A solid state switching circuit is arranged such that the application of an A.C. to the circuit causes operation of the circuit to either close or to open the switching circuit together with control circuit means to inhibit the operation of the switching circuit. A switching circuit for a load 14 comprises a TRIAC 13 which is rendered conductive by the application of a signal to its gate g. If a terminal T1 is positive with respect to a terminal T2, current flows from T1 to T2 by way of a diode bridge 15, resistor 3RES, the gate-cathode path of a thyristor SCR, the diode bridge 15 and the gate g to terminal T2 path of the TRIAC 13. The thyristor SCR is thus rendered conductive, which in turn renders the TRIAC 13 conductive, causing current to flow in the load 14. When the terminal T2 is positive to terminal T1, current flows in a similar path causing the thyristor SCR to become conductive once more and hence the TRIAC 13 with the consequent flow of current in the load 14. When it is desired to render the TRIAC 13 inoperative, a switch SW in a control circuit is closed, thereby energizing the primary winding of a transformer T from an A.C. source 28, 29. A capacitor 4C is thereby charged from the secondary winding of the transformer T by way of a diode bridge 25. The capacitor 4C is connected to the gatecathode circuit of the thyristor SCR such that the charge thereon inhibits firing of the thyristor and hence of the TRIAC 13. Voltage rate of change protection for the TRIAC 13 is provided by resistor IRES and capacitor 1C and surge protection by an element D1 which may be a Zener diode. The circuit arrangement shown in Fig. 1 provides a solid state relay circuit having a normally closed contact function, the modified circuit of Fig. 2 (not shown) provides a similar circuit, but which has a normally open contact function. The circuits are provided with components to provide noise suppression.
GB3520868A 1967-09-06 1968-07-24 Solid State Relay Circuit Expired GB1173416A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US66585367A 1967-09-06 1967-09-06

Publications (1)

Publication Number Publication Date
GB1173416A true GB1173416A (en) 1969-12-10

Family

ID=24671817

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3520868A Expired GB1173416A (en) 1967-09-06 1968-07-24 Solid State Relay Circuit

Country Status (1)

Country Link
GB (1) GB1173416A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2330704A (en) * 1997-10-21 1999-04-28 Timeguard Limited Semiconductor AC switch units

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2330704A (en) * 1997-10-21 1999-04-28 Timeguard Limited Semiconductor AC switch units

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee