GB1169726A - Metal-Semiconductor Barrier Devices - Google Patents

Metal-Semiconductor Barrier Devices

Info

Publication number
GB1169726A
GB1169726A GB5644866A GB5644866A GB1169726A GB 1169726 A GB1169726 A GB 1169726A GB 5644866 A GB5644866 A GB 5644866A GB 5644866 A GB5644866 A GB 5644866A GB 1169726 A GB1169726 A GB 1169726A
Authority
GB
United Kingdom
Prior art keywords
substrate
concentration
impurity
zone
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5644866A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1169726A publication Critical patent/GB1169726A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1,169,726. Semi-conductor devices. TEXAS INSTRUMENTS Inc. 16 Dec., 1966 [6 Jan., 1966], No. 56448/66. Heading H1K. A rectifying contact is made between a metal electrode 17 and a relatively low impurityconcentration zone 18 of a single conductivitytype monocrystalline semiconducting region provided in the surface of a high-resistivity dielectric substrate 10. An ohmic contact is provided between a second metal electrode and a high impurity-concentration zone of the same semi-conducting region. In the embodiment shown the substrate 10 is formed of highresistivity Si, with the low impurity-concentration zone 18 being produced therein by phosphorus diffusion through an oxide mask 11. Two spaced high-impurity concentration zones 24, 25 are diffused on either side of the zone 18, and electrodes 17, 20, 21 are provided by evaporation or sputtering of Mo followed by sputtering of Au. The electrode 17 forms a rectifying contact while the electrodes 20, 21 form ohmic contacts, the difference being due to the different impurity concentrations in the respective zones. A further metal layer 15 of Au, Al or Mo and Au is deposited on the back of the substrate 10, and forms a ground plane for a microstrip transmission line constituted by the metal electrodes 17, 20/21 and the dielectric substrate 10. In a microwave mixer circuit described in the Specification two rectifying-barrier diodes are formed in the same substrate. Other devices such as transistors, resistors, and inductors may also be integrated with a diode according to the invention. The high- and low-impurity concentration zones may both be formed in a single diffusion step, due to the lateral diffusion which occurs under an oxide mask defining the area of the high concentration zone. A contact made through an aperture formed in the mask above a peripheral portion (49), Fig. 9 (not shown), of the diffused region will encounter relatively low impurity-concentration material and will be rectifying, while a contact applied to the central portion (47) of the region will be ohmic. In an alternative manufacturing method the active zones are formed by epitaxial deposition of material into shallow recesses etched in the substrate through a Si 3 N 4 mask. In this method a relatively high impurity-concentration layer may first be deposited, followed by a lower concentration layer. Both active and dielectric parts of the structure may be of GaAs, the substrate containing Fe or Cr deep level impurities, and combinations of Ge with a semi-insulating GaAs substrate or Si with a semi-insulating GaP substrate are also referred to. The substrate may also be of polycrystalline, ceramic or epoxy material deposited over mesas formed on a monocrystalline wafer, the wafer then being lapped away to leave only the spaced mesa portions supported by the substrate.
GB5644866A 1966-01-06 1966-12-16 Metal-Semiconductor Barrier Devices Expired GB1169726A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US51903966A 1966-01-06 1966-01-06

Publications (1)

Publication Number Publication Date
GB1169726A true GB1169726A (en) 1969-11-05

Family

ID=32094254

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5644866A Expired GB1169726A (en) 1966-01-06 1966-12-16 Metal-Semiconductor Barrier Devices

Country Status (3)

Country Link
FR (1) FR1507501A (en)
GB (1) GB1169726A (en)
SE (1) SE320731B (en)

Also Published As

Publication number Publication date
SE320731B (en) 1970-02-16
FR1507501A (en) 1967-12-29

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