GB1149537A - Temperature compensated reference diode - Google Patents

Temperature compensated reference diode

Info

Publication number
GB1149537A
GB1149537A GB36656/66A GB3665666A GB1149537A GB 1149537 A GB1149537 A GB 1149537A GB 36656/66 A GB36656/66 A GB 36656/66A GB 3665666 A GB3665666 A GB 3665666A GB 1149537 A GB1149537 A GB 1149537A
Authority
GB
United Kingdom
Prior art keywords
layer
type
region
annular
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB36656/66A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of GB1149537A publication Critical patent/GB1149537A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/40Resistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/20Breakdown diodes, e.g. avalanche diodes
    • H10D8/25Zener diodes 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/645Combinations of only lateral BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/983Zener diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
GB36656/66A 1965-10-22 1966-08-16 Temperature compensated reference diode Expired GB1149537A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US500699A US3410735A (en) 1965-10-22 1965-10-22 Method of forming a temperature compensated reference diode

Publications (1)

Publication Number Publication Date
GB1149537A true GB1149537A (en) 1969-04-23

Family

ID=23990543

Family Applications (1)

Application Number Title Priority Date Filing Date
GB36656/66A Expired GB1149537A (en) 1965-10-22 1966-08-16 Temperature compensated reference diode

Country Status (4)

Country Link
US (1) US3410735A (https=)
DE (1) DE1564346A1 (https=)
GB (1) GB1149537A (https=)
NL (1) NL6612901A (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3495140A (en) * 1967-10-12 1970-02-10 Rca Corp Light-emitting diodes and method of making same
US3519900A (en) * 1967-11-13 1970-07-07 Motorola Inc Temperature compensated reference diodes and methods for making same
US3534231A (en) * 1968-02-15 1970-10-13 Texas Instruments Inc Low bulk leakage current avalanche photodiode
US3649882A (en) * 1970-05-13 1972-03-14 Albert Louis Hoffman Diffused alloyed emitter and the like and a method of manufacture thereof
US3953254A (en) * 1972-11-07 1976-04-27 Thomson-Csf Method of producing temperature compensated reference diodes utilizing selective epitaxial growth
US4075649A (en) * 1975-11-25 1978-02-21 Siemens Corporation Single chip temperature compensated reference diode and method for making same
US4870467A (en) * 1985-08-06 1989-09-26 Motorola, Inc. Monolithic temperature compensated voltage-reference diode and method of its manufacture
US4886762A (en) * 1985-08-06 1989-12-12 Motorola Inc. Monolithic temperature compensated voltage-reference diode and method for its manufacture

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3183129A (en) * 1960-10-14 1965-05-11 Fairchild Camera Instr Co Method of forming a semiconductor
US3197681A (en) * 1961-09-29 1965-07-27 Texas Instruments Inc Semiconductor devices with heavily doped region to prevent surface inversion
US3345216A (en) * 1964-10-07 1967-10-03 Motorola Inc Method of controlling channel formation
US3341377A (en) * 1964-10-16 1967-09-12 Fairchild Camera Instr Co Surface-passivated alloy semiconductor devices and method for producing the same

Also Published As

Publication number Publication date
NL6612901A (https=) 1967-04-24
DE1564346A1 (de) 1969-07-17
US3410735A (en) 1968-11-12

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