GB1143788A - - Google Patents

Info

Publication number
GB1143788A
GB1143788A GB1143788DA GB1143788A GB 1143788 A GB1143788 A GB 1143788A GB 1143788D A GB1143788D A GB 1143788DA GB 1143788 A GB1143788 A GB 1143788A
Authority
GB
United Kingdom
Prior art keywords
crystal
znte
compound
mnsb
feb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of GB1143788A publication Critical patent/GB1143788A/en
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D9/00—Crystallisation
    • B01D9/004—Fractional crystallisation; Fractionating or rectifying columns
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/06—Hydrogen phosphides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G30/00—Compounds of antimony
    • C01G30/002—Compounds containing antimony, with or without oxygen or hydrogen, and containing two or more other elements
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G30/00—Compounds of antimony
    • C01G30/008—Sulfides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/007—Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/42—Magnetic properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
GB1143788D 1965-02-27 Expired GB1143788A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL656502529A NL146720B (nl) 1965-02-27 1965-02-27 Werkwijze voor het insluitselvrij maken van kristallen en voorwerp, verkregen onder toepassing van de werkwijze.

Publications (1)

Publication Number Publication Date
GB1143788A true GB1143788A (enExample) 1900-01-01

Family

ID=19792513

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1143788D Expired GB1143788A (enExample) 1965-02-27

Country Status (6)

Country Link
AT (1) AT269074B (enExample)
BE (1) BE677151A (enExample)
CH (1) CH499991A (enExample)
DE (1) DE1519844C3 (enExample)
GB (1) GB1143788A (enExample)
NL (1) NL146720B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115966619A (zh) * 2023-01-09 2023-04-14 南京大学 一种碲化锌纳米片的制备方法以及一种光电器件及其制备方法和应用

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115966619A (zh) * 2023-01-09 2023-04-14 南京大学 一种碲化锌纳米片的制备方法以及一种光电器件及其制备方法和应用
CN115966619B (zh) * 2023-01-09 2025-08-12 南京大学 一种碲化锌纳米片的制备方法以及一种光电器件及其制备方法和应用

Also Published As

Publication number Publication date
NL6502529A (enExample) 1966-08-29
BE677151A (enExample) 1966-08-01
DE1519844B2 (de) 1973-10-04
NL146720B (nl) 1975-08-15
CH499991A (de) 1970-12-15
DE1519844A1 (de) 1969-02-13
DE1519844C3 (de) 1974-05-02
AT269074B (de) 1969-03-10

Similar Documents

Publication Publication Date Title
Carpentier et al. Vapour growth and crystal data of the thio (seleno)-hypodiphosphates Sn2P2S6, Sn2P2Se6, Pb2P2Se6 and their mixed crystals
Rimmington et al. The growth by iodine vapour transport techniques and the crystal structures of layer compounds in the series TiSxSe2− x, TiSxTe2− x, TiSexTe2− x
US3318669A (en) Method of producing and re-melting compounds and alloys
Geller et al. Superconductivity of intermetallic compounds with NaCl-type and related structures
US20240292762A1 (en) Phase change material
Gojayeva et al. Experimental reinvestigation of the PbTe-Bi2Te3 pseudo-binary system
GB1143788A (enExample)
US3238134A (en) Method for producing single-phase mixed crystals
GB1156199A (en) Improvements in or relating to Dielectric Materials with a Stable Dielectric Constant at High Temperature
US3940472A (en) Quaternary sulfides and selenides containing Ba or Sr and selected transition metals
US3734817A (en) Treated quartz vessels for use in producing and further processing iii-v semiconductor bodies low in silicon
GB1367509A (en) Methods of manufacturing single crystals of a semiconductor compound
GB921087A (en) Thermoelectric material
WO2022009679A1 (ja) 固体電解質部材の製造方法
US3417032A (en) Semiconducting niobate tantalate compositions
JPH02199006A (ja) １／２／５の組成を有する多元系金属カルコゲナイド
Goryunova et al. Phenomena in solid solutions
Nitsche Crystal chemistry, growth and properties of multi-cation chalcogenides
Al-Alamy et al. Growth conditions and crystal structure parameters of layer compounds in the series SnxZr1− xS2
Chase et al. Habit changes of Y3Al5O12 and Y3Ga5O12 grown from a PbO-PbF2 flux
US3020326A (en) Thermoelectric alloys and elements
GB1224433A (en) Improvements in or relating to semiconductive metal chalcogenides
US3956461A (en) Orthorhombic rare earth Hf and Zr sulfides and selenides
US3386799A (en) Growth of yttrium iron garnet
Smitiukh The Phase Еquilibrium in the HgS–Ga2S3–Bi (Sb) 2S3 Systems