GB1141918A - A microwave oscillating semiconductor device - Google Patents
A microwave oscillating semiconductor deviceInfo
- Publication number
- GB1141918A GB1141918A GB5333166A GB5333166A GB1141918A GB 1141918 A GB1141918 A GB 1141918A GB 5333166 A GB5333166 A GB 5333166A GB 5333166 A GB5333166 A GB 5333166A GB 1141918 A GB1141918 A GB 1141918A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- wafer
- impurity concentration
- produced
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000012535 impurity Substances 0.000 abstract 4
- 230000010355 oscillation Effects 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
- H03B7/12—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance
- H03B7/14—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B9/00—Generation of oscillations using transit-time effects
- H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
1,141,918. Semi-conductor devices. MATSUSHITA ELECTRONICS CORP. 29 Nov., 1966 [16 Dec., 1965], No. 53331/66. Heading H1K. A semi-conductor device capable of generating microwave oscillations comprises a germanium junction diode produced in a substrate having an impurity concentration in the range 10<SP>15</SP> to 10<SP>18</SP> atoms. cm<SP>-3</SP>, the oscillation being produced by applying a reverse bias greater than the breakdown voltage. As shown, Fig. 1, an N-type germanium wafer 4, having an impurity concentration within the specified range, is placed on a layer of tin solder 5 and an iron-nickel alloy plate 6. A layer 2 of indium is placed on the other face of wafer 4 and the assembly heated to alloy layer 2 to the wafer to form a P-type layer 3. The device is then electrolytically etched and encapsulated. A plurality of devices may be produced by epitaxially depositing a layer on a substrate of the opposite conductivity type having an impurity concentration within the specified range, applying an electrode to the grown layer by evaporation or soldering and then cutting up the wafer. Suitable diodes may also be produced by diffusion. An encapsulated diode may be mounted in a waveguide (10) provided with impedance matching screws (11) and supplied with a suitable reverse biasing voltage to generate electrical oscillations, Fig. 3 (not shown). The oscillations are stated to comprise a number of overlapping waves, and the critical frequency (i.e. that of the wave having the lowest frequency) increases with increasing impurity concentration of the substrate.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7883965 | 1965-12-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1141918A true GB1141918A (en) | 1969-02-05 |
Family
ID=13672984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5333166A Expired GB1141918A (en) | 1965-12-16 | 1966-11-29 | A microwave oscillating semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE691292A (en) |
| CH (1) | CH448186A (en) |
| GB (1) | GB1141918A (en) |
| NL (1) | NL146647B (en) |
-
1966
- 1966-11-29 GB GB5333166A patent/GB1141918A/en not_active Expired
- 1966-12-13 CH CH1784166A patent/CH448186A/en unknown
- 1966-12-15 NL NL6617632A patent/NL146647B/en not_active IP Right Cessation
- 1966-12-15 BE BE691292D patent/BE691292A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CH448186A (en) | 1967-12-15 |
| NL6617632A (en) | 1967-06-19 |
| NL146647B (en) | 1975-07-15 |
| DE1541494A1 (en) | 1972-01-13 |
| DE1541494B2 (en) | 1973-02-08 |
| BE691292A (en) | 1967-05-16 |
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