GB1138029A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1138029A GB1138029A GB970966A GB970966A GB1138029A GB 1138029 A GB1138029 A GB 1138029A GB 970966 A GB970966 A GB 970966A GB 970966 A GB970966 A GB 970966A GB 1138029 A GB1138029 A GB 1138029A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- base
- emitter
- screen
- pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- 239000004411 aluminium Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 238000005538 encapsulation Methods 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000007772 electroless plating Methods 0.000 abstract 1
- 238000009713 electroplating Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 239000011669 selenium Substances 0.000 abstract 1
- -1 siloxane compound Chemical class 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1,138,029. Semi-conductor devices. RADIO CORPORATION OF AMERICA. 4 March, 1966 [19 March, 1965], No. 9709/66. Heading H1K. In a transistor having an electrode contact bonding pad extending over a dielectric layer, the capacitance between the pad and the collector region is reduced by forming a low impedance screen region in the body below the location of the pad and connecting this region to a source of electrical potential. As shown, Fig. 1, the surface of an N-type silicon substrate 10 is masked and boron is diffused-in from the vapour phase to produce P-type regions 12 and 14 which constitute the base region and the screen region respectively. Phosphorous is diffused into region 12 to form N-type emitter region 18. The surface of the wafer is covered with a layer 20 of silicon oxide, windows are formed to expose parts of the emitter, base and screen regions, and aluminium is evaporated-on to form the electrodes. The emitter electrode comprises a portion 22 which contacts region 18 and a portion 21 which forms the bonding pad and overlies arm 15 of screen region 14 from which it is insulated by oxide layer 20. The base electrode is similarly constructed and arranged over arm 16 of region 14. Bonding pad 26 provides a contact to screen region 14 and may be earthed in use. The device is enclosed in a four-lead encapsulation. In a second embodiment, Figs. 2, 2a, 2b and 2c (not shown), the starting wafer comprises an epitaxial layer grown on a more highly doped substrate and the device has a plurality of emitter regions (47), each having an electrode (48) connecting it to a common emitter bonding pad (46), alternately arranged with base contact regions (33), each having an electrode (44) connecting it to a common base bonding pad (43). The transistor is produced by growing the epitaxial layer, diffusing-in heavily doped regions to form the base contacts (33) and the screen region (35) and then diffusing-in base region (41) and emitter region (47), covering the surface with silicon oxide, forming windows and depositing the contact regions. In further embodiments: (i) the screen region surrounds the base region and is electrically connected to the emitter region by means of a common bonding pad (76), Figs. 4, 4a and 4b (not shown); (ii) as in (i) but with the screen electrically connected to the base region instead of the emitter region, Fig. 5 (not shown); (iii) two separate screen regions are provided for the base and emitter bonding pads, the base pad screen region being connected to the emitter and the emitter pad screen region being left floating, Figs. 6 and 6a (not shown); and (iv) as in (iii) but with emitter pad screen region connected to the base and the base pad screen region being left floating, Fig. 7 (not shown). A plurality of transistors may be formed in a single wafer of semi-conductor material which is then divided into separate devices. The semiconductor material may be silicon, germanium, silicon-germanium alloy, gallium arsenide, or indium phosphide. The following impurities are referred to in connection with silicon devices, boron aluminium, gallium, indium, phosphorus, arsenic and antimony. Selenium and tellurium are mentioned as donors for gallium arsenide and indium phosphide. The electrodes may be of aluminium, gold or chromium and may be applied by evaporation, electroplating or electroless plating. If the semi-conductor material is gallium arsenide the insulating layer may be produced by forcing the pyrolytic decomposition products of a vaporized siloxane compound through a jet on to the wafer. An encapsulation, Fig. 3 (not shown), is described and comprises a header (50) with four lead-out wires one of which (57) is shorted to the header (50) and is also connected to the screen region. The body of the wafer (the collector) is mounted on a platform (59) connected to a lead-out wire (55<SP>11</SP>), and the emitter and base electrodes are connected to two other lead-out wires (55, 55<SP>1</SP>) respectively.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US44116065A | 1965-03-19 | 1965-03-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1138029A true GB1138029A (en) | 1968-12-27 |
Family
ID=23751779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB970966A Expired GB1138029A (en) | 1965-03-19 | 1966-03-04 | Semiconductor devices |
Country Status (3)
| Country | Link |
|---|---|
| ES (1) | ES324317A1 (en) |
| GB (1) | GB1138029A (en) |
| NL (1) | NL6603563A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2243485A (en) * | 1990-04-27 | 1991-10-30 | Motorola Gmbh | Semiconductor device contact pads |
-
1966
- 1966-03-04 GB GB970966A patent/GB1138029A/en not_active Expired
- 1966-03-17 ES ES0324317A patent/ES324317A1/en not_active Expired
- 1966-03-18 NL NL6603563A patent/NL6603563A/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2243485A (en) * | 1990-04-27 | 1991-10-30 | Motorola Gmbh | Semiconductor device contact pads |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6603563A (en) | 1966-09-20 |
| ES324317A1 (en) | 1967-02-01 |
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