GB1135988A - Modulation of laser diodes - Google Patents

Modulation of laser diodes

Info

Publication number
GB1135988A
GB1135988A GB4747666A GB4747666A GB1135988A GB 1135988 A GB1135988 A GB 1135988A GB 4747666 A GB4747666 A GB 4747666A GB 4747666 A GB4747666 A GB 4747666A GB 1135988 A GB1135988 A GB 1135988A
Authority
GB
United Kingdom
Prior art keywords
electron beam
laser
electrons
region
modulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4747666A
Inventor
Ronald Francis Johnston Broom
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Development Corp UK
Original Assignee
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Development Corp UK filed Critical National Research Development Corp UK
Priority to GB4747666A priority Critical patent/GB1135988A/en
Publication of GB1135988A publication Critical patent/GB1135988A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)

Abstract

1,135,988. Lasers. NATIONAL RESEARCH DEVELOPMENT CORP. 2 Nov., 1967 [22 Oct., 1966], No. 47476/66. Heading H1C. A semi-conductor laser diode pumped both by direct current injection and by directing a beam of electrons on to the surface, is modulated by varying the intensity of the electron beam incident upon the surface. In Fig. 3 the current J through region A 1 is maintained at about the threshold for lasing, so that the electron beam incident upon region A 2 causes laser action. The electron beam may either be intensity modulated or may be deflected to either side of the laser in order to modulate the laser output. A klystron or travelling wave tube may be built around the electron beam to cause bunching of the electrons.
GB4747666A 1966-10-22 1966-10-22 Modulation of laser diodes Expired GB1135988A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB4747666A GB1135988A (en) 1966-10-22 1966-10-22 Modulation of laser diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4747666A GB1135988A (en) 1966-10-22 1966-10-22 Modulation of laser diodes

Publications (1)

Publication Number Publication Date
GB1135988A true GB1135988A (en) 1968-12-11

Family

ID=10445120

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4747666A Expired GB1135988A (en) 1966-10-22 1966-10-22 Modulation of laser diodes

Country Status (1)

Country Link
GB (1) GB1135988A (en)

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