GB1135335A - Improvements in or relating to semiconductor oscillators - Google Patents
Improvements in or relating to semiconductor oscillatorsInfo
- Publication number
- GB1135335A GB1135335A GB2014166A GB2014166A GB1135335A GB 1135335 A GB1135335 A GB 1135335A GB 2014166 A GB2014166 A GB 2014166A GB 2014166 A GB2014166 A GB 2014166A GB 1135335 A GB1135335 A GB 1135335A
- Authority
- GB
- United Kingdom
- Prior art keywords
- oscillator
- semi
- fundamental frequency
- conductor
- impedance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B9/00—Generation of oscillations using transit-time effects
- H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
- H03B9/14—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
- H03B9/145—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance the frequency being determined by a cavity resonator, e.g. a hollow waveguide cavity or a coaxial cavity
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
1,135,335. Semi-conductor oscillators. NATIONAL RESEARCH DEVELOPMENT CORP. 3 May, 1967 [6 May, 1966], No. 20141/66. Heading H3T. In a semi-conductor oscillator having a semiconductor device 1 of the kind having the bulk property of exhibiting a current/voltage characteristic having a region of negative differential resistivity which allows current to switch from a high level to a lower level as a voltage applied across the device is increased, a resonant circuit is connected to the semi-conductor device so as to present an impedance at the second harmonic which is high compared to that presented to the fundamental frequency of the oscillator. This enhances the power output at the fundamental frequency of the oscillator. In the microwave oscillator shown (Fig. 2a) a coaxial cavity is provided with a choke 2 which provides low inductive impedance at the fundamental frequency but provides a high impedance at the second harmonic frequency. The cavity can be approximately one eighth the wavelength of the fundamental frequency (Fig. 2c, not shown), and is tuned by non-contacting tuning plungers 3. The oscillator output is connected to a resistive load by a coupling loop 4. The semi-conductor device may be of gallium arsenide or gallium arsenide phosphide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2014166A GB1135335A (en) | 1966-05-06 | 1966-05-06 | Improvements in or relating to semiconductor oscillators |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2014166A GB1135335A (en) | 1966-05-06 | 1966-05-06 | Improvements in or relating to semiconductor oscillators |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1135335A true GB1135335A (en) | 1968-12-04 |
Family
ID=10141058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2014166A Expired GB1135335A (en) | 1966-05-06 | 1966-05-06 | Improvements in or relating to semiconductor oscillators |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1135335A (en) |
-
1966
- 1966-05-06 GB GB2014166A patent/GB1135335A/en not_active Expired
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