GB1130793A - Production of artificial crystals - Google Patents

Production of artificial crystals

Info

Publication number
GB1130793A
GB1130793A GB43404/66A GB4340466A GB1130793A GB 1130793 A GB1130793 A GB 1130793A GB 43404/66 A GB43404/66 A GB 43404/66A GB 4340466 A GB4340466 A GB 4340466A GB 1130793 A GB1130793 A GB 1130793A
Authority
GB
United Kingdom
Prior art keywords
seeds
inch
autoclave
quartz
length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB43404/66A
Inventor
Charles Baldwin Sawyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sawyer Res Products Inc
Original Assignee
Sawyer Res Products Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sawyer Res Products Inc filed Critical Sawyer Res Products Inc
Priority to GB43404/66A priority Critical patent/GB1130793A/en
Publication of GB1130793A publication Critical patent/GB1130793A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/18—Quartz

Abstract

1,130,793. Synthetic quartz. SAWYER RESEARCH PRODUCTS Inc. 28 Sept., 1966, No. 43404/66. Heading C1A. [Also in Division B1] A plurality of plate-like crystals of quartz are grown in a cylindrical autoclave from an aqueous sodium carbonate solution on a plurality of seeds 33 supported by holders in a rack such that the seeds are all orientated in the same direction with their longitudinal axes parallel to the longitudinal axis of the autoclave and growth is substantially limited to the parallel major surfaces, which surfaces intersect the crystallographic Z-axis at an angle of 94#6 degrees. The holders each comprise a pair of smooth parallel plates 35, 36 between which a seed is held along its length at opposite minor surfaces. The plates are of iron, silver, titanium, or graphite. Each seed preferably has its length substantially along the Y-axis. It may have a length of at least 4À5 inch, a thickness of 0À04-0À14 inch, and a width of at least 0À5 inch. The solution is carried upwards by convection to the seeds from a supply of quartz at the bottom of the autoclave. The progress of crystallization is followed by means of Gamma-ray photographs. An example of operating conditions is given.
GB43404/66A 1966-09-28 1966-09-28 Production of artificial crystals Expired GB1130793A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB43404/66A GB1130793A (en) 1966-09-28 1966-09-28 Production of artificial crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB43404/66A GB1130793A (en) 1966-09-28 1966-09-28 Production of artificial crystals

Publications (1)

Publication Number Publication Date
GB1130793A true GB1130793A (en) 1968-10-16

Family

ID=10428617

Family Applications (1)

Application Number Title Priority Date Filing Date
GB43404/66A Expired GB1130793A (en) 1966-09-28 1966-09-28 Production of artificial crystals

Country Status (1)

Country Link
GB (1) GB1130793A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2139204A (en) * 1983-05-06 1984-11-07 Univ Moskovsk Process for producing fine-crystalline alpha quartz
FR2764909A1 (en) * 1997-06-24 1998-12-24 Commissariat Energie Atomique MANUFACTURE OF PLATE-SHAPED SINGLE CRYSTALS BY GROWING SOLUTION
EP1152073A1 (en) * 2000-05-02 2001-11-07 Sawyer Research Products, Inc. Method and apparatus for growing crystals

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2139204A (en) * 1983-05-06 1984-11-07 Univ Moskovsk Process for producing fine-crystalline alpha quartz
FR2764909A1 (en) * 1997-06-24 1998-12-24 Commissariat Energie Atomique MANUFACTURE OF PLATE-SHAPED SINGLE CRYSTALS BY GROWING SOLUTION
WO1998059097A1 (en) * 1997-06-24 1998-12-30 Commissariat A L'energie Atomique Making monocrystals in the form of plates by growth in a solution
EP1152073A1 (en) * 2000-05-02 2001-11-07 Sawyer Research Products, Inc. Method and apparatus for growing crystals

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