GB1125217A - Improvements in semi-conductor rectifier arrangements - Google Patents

Improvements in semi-conductor rectifier arrangements

Info

Publication number
GB1125217A
GB1125217A GB36988/67A GB3698867A GB1125217A GB 1125217 A GB1125217 A GB 1125217A GB 36988/67 A GB36988/67 A GB 36988/67A GB 3698867 A GB3698867 A GB 3698867A GB 1125217 A GB1125217 A GB 1125217A
Authority
GB
United Kingdom
Prior art keywords
discs
electrodes
disc
silver
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB36988/67A
Inventor
Heinz Juchmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Priority to GB36988/67A priority Critical patent/GB1125217A/en
Publication of GB1125217A publication Critical patent/GB1125217A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/112—Mixed assemblies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/073—Apertured devices mounted on one or more rods passed through the apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Die Bonding (AREA)

Abstract

1,125,217. Semi-conductor devices. LICENTIA PATENT - VERWALTUNGS G.m.b.H. 11 Aug., 1967, No. 36988/67. Heading H1K. A rectifier cell comprises a disc 1 of semiconductor material, e.g. silicon, maintained in pressure contact with two disc electrodes 2, 3 in a casing consisting of a side wall 6 of resilient insulating material, e.g. silicone rubber, hermetically sealed to metal base and cover discs 4, 5. Preferably the electrodes are made of molybdenum and the discs 4, 5 of copper and silver respectively, but in a modification the electrode 2 is made of silver and the disc 5 of copper. Silver discs may be inserted between the electrodes and the discs 4, 5. A plurality of cells may be arranged in a common plane between common base and cover discs, or may be stacked in a column.
GB36988/67A 1967-08-11 1967-08-11 Improvements in semi-conductor rectifier arrangements Expired GB1125217A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB36988/67A GB1125217A (en) 1967-08-11 1967-08-11 Improvements in semi-conductor rectifier arrangements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB36988/67A GB1125217A (en) 1967-08-11 1967-08-11 Improvements in semi-conductor rectifier arrangements

Publications (1)

Publication Number Publication Date
GB1125217A true GB1125217A (en) 1968-08-28

Family

ID=10392814

Family Applications (1)

Application Number Title Priority Date Filing Date
GB36988/67A Expired GB1125217A (en) 1967-08-11 1967-08-11 Improvements in semi-conductor rectifier arrangements

Country Status (1)

Country Link
GB (1) GB1125217A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2080613A1 (en) * 1970-02-19 1971-11-19 Philips Nv

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2080613A1 (en) * 1970-02-19 1971-11-19 Philips Nv

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