GB1115249A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1115249A
GB1115249A GB3274465A GB3274465A GB1115249A GB 1115249 A GB1115249 A GB 1115249A GB 3274465 A GB3274465 A GB 3274465A GB 3274465 A GB3274465 A GB 3274465A GB 1115249 A GB1115249 A GB 1115249A
Authority
GB
United Kingdom
Prior art keywords
planar
july
diffused
insulator
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3274465A
Inventor
Roger Cullis
Edward Robert Monks
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB3274465A priority Critical patent/GB1115249A/en
Publication of GB1115249A publication Critical patent/GB1115249A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

1,115,249. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. 29 July, 1966 [30 July, 1965], No. 32744/65. Heading H1K. An insulated-gate field effect transistor (F.E.T.) is formed on the surface of a semiconductor body from which a planar semiconductor device is made, part of an insulating layer on the surface lying beneath the metal gate-electrode of the F.E.T. A means of assessment of the reliability of the device is thus provided, for example by a measurement of the mutual conductance of the F.E.T. The device may be a double-diffused planar silicon bi-polar transistor, in which case P<SP>+</SP>-type source and drain regions of the F.E.T. may be diffused into an n-type crystal simultaneously with the base region of the bi-polar transistor. The gate insulator is then formed during a general surface oxidation stage, which also serves as the drive-in stage for the emitter diffusion. The metal gate electrode is evaporated on to the insulator. In another embodiment one of the F.E.T. electrodes serves as a guard ring to reduce the formation of unwanted surface channels from a junction of the planar device.
GB3274465A 1965-07-30 1965-07-30 Semiconductor devices Expired GB1115249A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3274465A GB1115249A (en) 1965-07-30 1965-07-30 Semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3274465A GB1115249A (en) 1965-07-30 1965-07-30 Semiconductor devices

Publications (1)

Publication Number Publication Date
GB1115249A true GB1115249A (en) 1968-05-29

Family

ID=10343370

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3274465A Expired GB1115249A (en) 1965-07-30 1965-07-30 Semiconductor devices

Country Status (1)

Country Link
GB (1) GB1115249A (en)

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