GB1111028A - A semiconductor device incorporating a pressure multiple electrical contact assembly - Google Patents
A semiconductor device incorporating a pressure multiple electrical contact assemblyInfo
- Publication number
- GB1111028A GB1111028A GB11125/67A GB1112567A GB1111028A GB 1111028 A GB1111028 A GB 1111028A GB 11125/67 A GB11125/67 A GB 11125/67A GB 1112567 A GB1112567 A GB 1112567A GB 1111028 A GB1111028 A GB 1111028A
- Authority
- GB
- United Kingdom
- Prior art keywords
- disc
- stud
- lead
- base alloys
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- H01L2924/097—Glass-ceramics, e.g. devitrified glass
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- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
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- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
Abstract
1,111,028. Semi-conductor devices. WESTINGHOUSE ELECTRIC CORPORATION. 9 March, 1967 [8 June, 1966], No. 11125/67. Heading H1K. A spring loaded contact assembly in a semiconductor device includes a deformable insulating disc 12 of P.T.F.E. or P.T.F.C.E. which forces contact members 30, 36 against contact areas or regions 61, 62 of a semiconductor body. The contact members (which consist of Cu, Ag, Ni, Au, In, Sn, or basealloys thereof) have portions passing through holes extending from face to face of the de formable member 12, and have silver wires 34, 38 attached thereto. The deformable member under the action of spring washers 74, 76 is forced to adopt the surface contour defined by the special shaped end zone 61 and zone 62 of the semi-conductor body. As described the complete device has a threaded contact stud 42 of Cu, Ag, Al, of base alloys of these (e.g. brass), or of ferrous-base alloys to which is brazed a cylindrical housing which may be of ferrous-base alloy. On the stud is a layer 58 of a soft metal (Au, Ag, Sn, In, Pb, or Al) to compensate for surface irregularities between the stud and a (gold-plated) disc of Mo, W, Ta or of base alloys thereof. A solder layer 68 (Ag/Pb/Sb) lies between this and the semiconductor body comprising layers 61, 62, 63 with PN junction between adjacent layers. The spring washers 76 act between metal thrust washers 74, 78 the lower of which acts on an insulating washer 72 of ceramic, mica, glass, quartz, or fluorocarbon. The upper thrust washer is retained in the assembly by a snap ring 80 fitting a groove in the housing wall. An apertured insulating disc stops excessive lateral movement of the silver wires 34, 38 to prevent them from damage. Lying on the disc is a moisture getter formed by a ring 88 of a molecular sieve. The cover 94, 96 is projection welded on to the casing. The silver lead 34 is swaged or rolled within its surrounding sleeve to form a seal and the other lead 28 is terminated with a blind sleeve from which a further lead 108 extends.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US556206A US3358196A (en) | 1966-06-08 | 1966-06-08 | Pressure multiple electrical contact assembly for electrical devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1111028A true GB1111028A (en) | 1968-04-24 |
Family
ID=24220334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB11125/67A Expired GB1111028A (en) | 1966-06-08 | 1967-03-09 | A semiconductor device incorporating a pressure multiple electrical contact assembly |
Country Status (2)
Country | Link |
---|---|
US (1) | US3358196A (en) |
GB (1) | GB1111028A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0026290A1 (en) * | 1979-09-28 | 1981-04-08 | Deutsche Vitrohm GmbH & Co. KG | Process for the production of low ohmic resistors |
GB2135119A (en) * | 1983-01-19 | 1984-08-22 | Westinghouse Electric Corp | Self-aligning, self-loading semiconductor clamp |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1133358A (en) * | 1966-11-11 | 1968-11-13 | Ass Elect Ind | Pressure contact semi-conductor devices |
US3441814A (en) * | 1967-03-30 | 1969-04-29 | Westinghouse Electric Corp | Interlocking multiple electrical contact structure for compression bonded power semiconductor devices |
US3577042A (en) * | 1967-06-19 | 1971-05-04 | Int Rectifier Corp | Gate connection for controlled rectifiers |
US4543457A (en) * | 1984-01-25 | 1985-09-24 | Transensory Devices, Inc. | Microminiature force-sensitive switch |
EP0381849A1 (en) * | 1989-02-07 | 1990-08-16 | Asea Brown Boveri Ag | Fast power semiconductor circuit |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2728881A (en) * | 1950-03-31 | 1955-12-27 | Gen Electric | Asymmetrically conductive devices |
US3059157A (en) * | 1958-11-14 | 1962-10-16 | Texas Instruments Inc | Semiconductor rectifier |
US3296501A (en) * | 1962-11-07 | 1967-01-03 | Westinghouse Electric Corp | Metallic ceramic composite contacts for semiconductor devices |
-
1966
- 1966-06-08 US US556206A patent/US3358196A/en not_active Expired - Lifetime
-
1967
- 1967-03-09 GB GB11125/67A patent/GB1111028A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0026290A1 (en) * | 1979-09-28 | 1981-04-08 | Deutsche Vitrohm GmbH & Co. KG | Process for the production of low ohmic resistors |
GB2135119A (en) * | 1983-01-19 | 1984-08-22 | Westinghouse Electric Corp | Self-aligning, self-loading semiconductor clamp |
Also Published As
Publication number | Publication date |
---|---|
US3358196A (en) | 1967-12-12 |
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