GB1111028A - A semiconductor device incorporating a pressure multiple electrical contact assembly - Google Patents

A semiconductor device incorporating a pressure multiple electrical contact assembly

Info

Publication number
GB1111028A
GB1111028A GB11125/67A GB1112567A GB1111028A GB 1111028 A GB1111028 A GB 1111028A GB 11125/67 A GB11125/67 A GB 11125/67A GB 1112567 A GB1112567 A GB 1112567A GB 1111028 A GB1111028 A GB 1111028A
Authority
GB
United Kingdom
Prior art keywords
disc
stud
lead
base alloys
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB11125/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB1111028A publication Critical patent/GB1111028A/en
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
    • H—ELECTRICITY
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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    • H01L2924/01082—Lead [Pb]
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    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
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    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)

Abstract

1,111,028. Semi-conductor devices. WESTINGHOUSE ELECTRIC CORPORATION. 9 March, 1967 [8 June, 1966], No. 11125/67. Heading H1K. A spring loaded contact assembly in a semiconductor device includes a deformable insulating disc 12 of P.T.F.E. or P.T.F.C.E. which forces contact members 30, 36 against contact areas or regions 61, 62 of a semiconductor body. The contact members (which consist of Cu, Ag, Ni, Au, In, Sn, or basealloys thereof) have portions passing through holes extending from face to face of the de formable member 12, and have silver wires 34, 38 attached thereto. The deformable member under the action of spring washers 74, 76 is forced to adopt the surface contour defined by the special shaped end zone 61 and zone 62 of the semi-conductor body. As described the complete device has a threaded contact stud 42 of Cu, Ag, Al, of base alloys of these (e.g. brass), or of ferrous-base alloys to which is brazed a cylindrical housing which may be of ferrous-base alloy. On the stud is a layer 58 of a soft metal (Au, Ag, Sn, In, Pb, or Al) to compensate for surface irregularities between the stud and a (gold-plated) disc of Mo, W, Ta or of base alloys thereof. A solder layer 68 (Ag/Pb/Sb) lies between this and the semiconductor body comprising layers 61, 62, 63 with PN junction between adjacent layers. The spring washers 76 act between metal thrust washers 74, 78 the lower of which acts on an insulating washer 72 of ceramic, mica, glass, quartz, or fluorocarbon. The upper thrust washer is retained in the assembly by a snap ring 80 fitting a groove in the housing wall. An apertured insulating disc stops excessive lateral movement of the silver wires 34, 38 to prevent them from damage. Lying on the disc is a moisture getter formed by a ring 88 of a molecular sieve. The cover 94, 96 is projection welded on to the casing. The silver lead 34 is swaged or rolled within its surrounding sleeve to form a seal and the other lead 28 is terminated with a blind sleeve from which a further lead 108 extends.
GB11125/67A 1966-06-08 1967-03-09 A semiconductor device incorporating a pressure multiple electrical contact assembly Expired GB1111028A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US556206A US3358196A (en) 1966-06-08 1966-06-08 Pressure multiple electrical contact assembly for electrical devices

Publications (1)

Publication Number Publication Date
GB1111028A true GB1111028A (en) 1968-04-24

Family

ID=24220334

Family Applications (1)

Application Number Title Priority Date Filing Date
GB11125/67A Expired GB1111028A (en) 1966-06-08 1967-03-09 A semiconductor device incorporating a pressure multiple electrical contact assembly

Country Status (2)

Country Link
US (1) US3358196A (en)
GB (1) GB1111028A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0026290A1 (en) * 1979-09-28 1981-04-08 Deutsche Vitrohm GmbH & Co. KG Process for the production of low ohmic resistors
GB2135119A (en) * 1983-01-19 1984-08-22 Westinghouse Electric Corp Self-aligning, self-loading semiconductor clamp

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1133358A (en) * 1966-11-11 1968-11-13 Ass Elect Ind Pressure contact semi-conductor devices
US3441814A (en) * 1967-03-30 1969-04-29 Westinghouse Electric Corp Interlocking multiple electrical contact structure for compression bonded power semiconductor devices
US3577042A (en) * 1967-06-19 1971-05-04 Int Rectifier Corp Gate connection for controlled rectifiers
US4543457A (en) * 1984-01-25 1985-09-24 Transensory Devices, Inc. Microminiature force-sensitive switch
EP0381849A1 (en) * 1989-02-07 1990-08-16 Asea Brown Boveri Ag Fast power semiconductor circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2728881A (en) * 1950-03-31 1955-12-27 Gen Electric Asymmetrically conductive devices
US3059157A (en) * 1958-11-14 1962-10-16 Texas Instruments Inc Semiconductor rectifier
US3296501A (en) * 1962-11-07 1967-01-03 Westinghouse Electric Corp Metallic ceramic composite contacts for semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0026290A1 (en) * 1979-09-28 1981-04-08 Deutsche Vitrohm GmbH & Co. KG Process for the production of low ohmic resistors
GB2135119A (en) * 1983-01-19 1984-08-22 Westinghouse Electric Corp Self-aligning, self-loading semiconductor clamp

Also Published As

Publication number Publication date
US3358196A (en) 1967-12-12

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