GB1106226A - Improvements in or relating to the manufacture of electric resistance elements - Google Patents

Improvements in or relating to the manufacture of electric resistance elements

Info

Publication number
GB1106226A
GB1106226A GB1190065A GB1190065A GB1106226A GB 1106226 A GB1106226 A GB 1106226A GB 1190065 A GB1190065 A GB 1190065A GB 1190065 A GB1190065 A GB 1190065A GB 1106226 A GB1106226 A GB 1106226A
Authority
GB
United Kingdom
Prior art keywords
oxides
copper
semi
copper oxide
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1190065A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB1106226A publication Critical patent/GB1106226A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0018—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and monovalent metal oxide as main constituents
    • C03C10/0027—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and monovalent metal oxide as main constituents containing SiO2, Al2O3, Li2O as main constituents
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0036—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents
    • C03C10/0045—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents containing SiO2, Al2O3 and MgO as main constituents
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0054—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing PbO, SnO2, B2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06573—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the permanent binder
    • H01C17/0658—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the permanent binder composed of inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/021—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient formed as one or more layers or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/12—Overvoltage protection resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Dispersion Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Glass Compositions (AREA)

Abstract

A glass-ceramic body is provided with a surface layer of one or more semi-conducting oxides by incorporating into the batch to be crystallized one or more suitable metal oxides, particularly copper oxides, or equivalent metals or salts which will be wholly or partly rejected by the crystalline phase and migrate to the surface to form the semi-conducting layer. With copper oxide a reducing agent, e.g. tin or zinc is preferably also present. The migrating oxide may be an impurity e.g. iron oxide. The migrating oxides or equivalents may be present in pairs suitable for forming semi-conducting spinels of the AB2O4 type and selected from the oxides of iron, chromium, antimony, nickel, copper, manganese, cobalt, zinc, tin and titanium. The base glass-ceramic is preferably B-eucryptite, B-spodumene or cordierite and may have the composition SiO2 42-51%, Al2O3 32-37%, Li2O 3-11%, TiO2 4-9%, and optionally MgO 4-12% and/or B2O3 1-4% by weight. Suitable quantities of copper oxide are up to 5%, preferably 1.5-2%. MnO2 may be used in conjunction with copper oxide, up to 10%, preferably 1.5 to 5% by weight. If a reducing metal is present with the copper oxide the molar ratio of copper to reducing metal should be 0.5 to 2. Surface resistivities may be controlled by the nature of the semi-conducting oxides, by the devitrefication temperature and by devitrefying in a reducing atmosphere. In examples various glasses of the composition described and containing 2 or 5% copper oxide with or without MnO2 were melted, homogenized, shaped and devitrefied at temperatures between 800 and 1000 DEG C. in air or a nitrogen/hydrogen mixture to give products having surface resistivities of 4.5 x 104 to 2 x 109 ohms/cm.2 (for air devitrefication) and down to 103 ohms/cm.2 (for reducing atmosphere devitrefication). The products are useful as cathode drop arrestors.
GB1190065A 1964-03-20 1965-03-19 Improvements in or relating to the manufacture of electric resistance elements Expired GB1106226A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE1964S0090126 DE1490535A1 (en) 1964-03-20 1964-03-20 Electrical resistance body
DES0092538 1964-08-08

Publications (1)

Publication Number Publication Date
GB1106226A true GB1106226A (en) 1968-03-13

Family

ID=25997604

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1190065A Expired GB1106226A (en) 1964-03-20 1965-03-19 Improvements in or relating to the manufacture of electric resistance elements

Country Status (5)

Country Link
BE (1) BE661375A (en)
CH (1) CH449102A (en)
DE (1) DE1490535A1 (en)
FR (1) FR1423411A (en)
GB (1) GB1106226A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4112193A (en) 1975-11-11 1978-09-05 Nippon Gaishi Kabushiki Kaishi Electrical insulators
US6043582A (en) * 1998-08-19 2000-03-28 General Electric Co. Stable conductive material for high voltage armature bars

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4215020A (en) * 1978-04-03 1980-07-29 Trw Inc. Electrical resistor material, resistor made therefrom and method of making the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4112193A (en) 1975-11-11 1978-09-05 Nippon Gaishi Kabushiki Kaishi Electrical insulators
US6043582A (en) * 1998-08-19 2000-03-28 General Electric Co. Stable conductive material for high voltage armature bars

Also Published As

Publication number Publication date
FR1423411A (en) 1966-01-03
CH449102A (en) 1967-12-31
DE1490535A1 (en) 1969-06-04
BE661375A (en) 1965-09-20

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