GB1076483A - Manufacture of semi-conductor devices - Google Patents
Manufacture of semi-conductor devicesInfo
- Publication number
- GB1076483A GB1076483A GB2020465A GB2020465A GB1076483A GB 1076483 A GB1076483 A GB 1076483A GB 2020465 A GB2020465 A GB 2020465A GB 2020465 A GB2020465 A GB 2020465A GB 1076483 A GB1076483 A GB 1076483A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- diffusing
- region
- semi
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- 230000000873 masking effect Effects 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
1,076,483. Semi-conductor devices. JOSEPH LUCAS (INDUSTRIES) Ltd. April 20, 1966 [May 13, 1965], No. 20204/65. Heading H1K. A semi-conductor device is produced by masking part of a surface of a body of one conductivity type, diffusing an impurity of the same type into the exposed parts of the surface, and then diffusing an impurity of the opposite type into the whole of the surface. As shown in the flow sheet, a transistor is produced by forming an oxide mask 12 on part of the surface of an N-type silicon wafer 11, diffusing-in phosphorus to form N+ type regions 13 and 14, removing oxide mask 12 and diffusing-in boron to form P-type base region 15 (the impurity concentration being insufficient to convert the surface parts of region 13), masking with an oxide layer 16 and diffusing in phosphorus to form N-type emitter region 17. Emitter and base contacts are applied to regions 17 and 15 and the collector contact may be applied either to region 13 or to region 14. P-type region 15 may also be formed by diffusing-in gallium when the oxide mask 12 need not be removed since gallium can penetrate it.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2020465A GB1076483A (en) | 1965-05-13 | 1965-05-13 | Manufacture of semi-conductor devices |
FR59471A FR1477972A (en) | 1965-05-13 | 1966-04-28 | Semiconductor device manufacturing process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2020465A GB1076483A (en) | 1965-05-13 | 1965-05-13 | Manufacture of semi-conductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1076483A true GB1076483A (en) | 1967-07-19 |
Family
ID=10142156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2020465A Expired GB1076483A (en) | 1965-05-13 | 1965-05-13 | Manufacture of semi-conductor devices |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1076483A (en) |
-
1965
- 1965-05-13 GB GB2020465A patent/GB1076483A/en not_active Expired
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