GB1057992A - Improvements in semiconductor injection recombination radiation sources - Google Patents
Improvements in semiconductor injection recombination radiation sourcesInfo
- Publication number
- GB1057992A GB1057992A GB1809865A GB1809865A GB1057992A GB 1057992 A GB1057992 A GB 1057992A GB 1809865 A GB1809865 A GB 1809865A GB 1809865 A GB1809865 A GB 1809865A GB 1057992 A GB1057992 A GB 1057992A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- electrode
- semi
- selenide
- vapour
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 230000005855 radiation Effects 0.000 title abstract 3
- 238000002347 injection Methods 0.000 title abstract 2
- 239000007924 injection Substances 0.000 title abstract 2
- 230000006798 recombination Effects 0.000 title abstract 2
- 238000005215 recombination Methods 0.000 title abstract 2
- 230000008021 deposition Effects 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 150000004770 chalcogenides Chemical class 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052709 silver Inorganic materials 0.000 abstract 2
- 239000004332 silver Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 abstract 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 abstract 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 abstract 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 229910003437 indium oxide Inorganic materials 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052741 iridium Inorganic materials 0.000 abstract 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 abstract 1
- 229910000058 selane Inorganic materials 0.000 abstract 1
- 150000004771 selenides Chemical class 0.000 abstract 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000012780 transparent material Substances 0.000 abstract 1
- 235000005074 zinc chloride Nutrition 0.000 abstract 1
- 239000011592 zinc chloride Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
- H05B33/145—Arrangements of the electroluminescent material
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Light Receiving Elements (AREA)
Abstract
A semi-conductor injection recombination radiation source consists of a layered structure comprising a support, a first electrode, a semi-conductive layer of a P-type chalcogenide grown from the vapour phase, an N-type semi-conductive layer, and a second electrode. A chalcogenide is defined as an oxide, sulphide, selenide. <PICT:1057992/C4-C5/1> or telluride of a metal. As shown, a layer 2 of iridium is sputtered on to a glass plate 1 and covered with a thin layer of silver by vapour deposition. A layer 4 of zinc selenide is vapour deposited in vacuo on to layer 2 and is then heated in an atmosphere of argon to diffuse the silver into layer 4 to make it P-conductive. A transparent electrode 6 of indium oxide is applied to layer 4 and the device is heated to diffuse indium from electrode 6 into layer 4 to form N-type region 5. The device is mounted in a transparent envelope and when forward biased emits radiation through electrode 6. Electrode 2 may also be of transparent material or alternatively electrode 2 and substrate 1 may form a reflective surface. Layer 4 may also be doped by the vapour deposition of an acceptor simultaneously with the deposition of the semi-conductor material. Layer 4 may be produced by the reaction of vapours of hydrogen selenide and zinc chloride at the surface of the substrate. Cadmium telluride is also mentioned as a suitable semi-conductor material. A plurality of devices may be produced on a single support and may be combined with photo-sensitive layers to produce opto-electronic devices.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6404898A NL6404898A (en) | 1964-05-02 | 1964-05-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1057992A true GB1057992A (en) | 1967-02-08 |
Family
ID=19789992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1809865A Expired GB1057992A (en) | 1964-05-02 | 1965-04-29 | Improvements in semiconductor injection recombination radiation sources |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1489430A1 (en) |
| GB (1) | GB1057992A (en) |
| NL (1) | NL6404898A (en) |
-
1964
- 1964-05-02 NL NL6404898A patent/NL6404898A/xx unknown
-
1965
- 1965-04-28 DE DE19651489430 patent/DE1489430A1/en active Pending
- 1965-04-29 GB GB1809865A patent/GB1057992A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1489430A1 (en) | 1969-07-24 |
| NL6404898A (en) | 1965-11-03 |
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