GB1055682A - Improvements in or relating to controlled rectifiers - Google Patents
Improvements in or relating to controlled rectifiersInfo
- Publication number
- GB1055682A GB1055682A GB30072/65A GB3007265A GB1055682A GB 1055682 A GB1055682 A GB 1055682A GB 30072/65 A GB30072/65 A GB 30072/65A GB 3007265 A GB3007265 A GB 3007265A GB 1055682 A GB1055682 A GB 1055682A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zones
- zone
- type
- electrodes
- capacitively coupled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229940084430 four-way Drugs 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Rectifiers (AREA)
- Thyristors (AREA)
Abstract
1,055,682. Controlled rectifiers. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. July 15, 1965 [July 18. 1964], No. 30072/65. Heading H1K. The breakdown voltage of a PNPN controlled rectifier with electrodes on the outermost zones is controlled via an electrode capacitively coupled to one of the inner zones. In the typical device shown in Fig. 2 zones 2 and 4 are formed simultaneously by diffusing boron into an N-type silicon wafer 5 through apertures produced by photolithographic techniques in oxide masking and zone 1 formed in a subsequent phosphorus diffusion. The control electrode 8 is formed by etching a layer of aluminium vapour deposited over the oxide surface and wire electrodes 6, 7, 13 of gold or aluminium are thermocompression bonded in the positions shown. In a modified form of device zone 4 is replaced by two zones with independent electrodes capacitively coupled to associated parts of the adjacent inner zones, to provide a pair of devices with two zones in common. Another device constituting a fourway switch comprises 4 pairs of zones equivalent to zones 1, 2 of Fig. 2 disposed around a central P-type zone and spaced therefrom by the N-type wafer material. Separate control electrodes are arranged over the N-type material between the central zone and the zones 2 of the respective pairs of zone. In a further device (Fig. 7, not shown) one or more inclusions of P-type are disposed in the surface of the inner zone to split this into separate portions each provided with a capacitively coupled control electrode.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6408263A NL6408263A (en) | 1964-07-18 | 1964-07-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1055682A true GB1055682A (en) | 1967-01-18 |
Family
ID=19790569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB30072/65A Expired GB1055682A (en) | 1964-07-18 | 1965-07-15 | Improvements in or relating to controlled rectifiers |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS4325388B1 (en) |
| CH (1) | CH430884A (en) |
| DE (1) | DE1514264B2 (en) |
| FR (1) | FR1439780A (en) |
| GB (1) | GB1055682A (en) |
| NL (1) | NL6408263A (en) |
| SE (1) | SE337431B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4445133A (en) * | 1980-08-22 | 1984-04-24 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device |
-
1964
- 1964-07-18 NL NL6408263A patent/NL6408263A/xx unknown
-
1965
- 1965-07-14 DE DE1965N0027027 patent/DE1514264B2/en active Granted
- 1965-07-15 SE SE09383/65A patent/SE337431B/xx unknown
- 1965-07-15 GB GB30072/65A patent/GB1055682A/en not_active Expired
- 1965-07-15 CH CH995665A patent/CH430884A/en unknown
- 1965-07-15 JP JP4254765A patent/JPS4325388B1/ja active Pending
- 1965-07-16 FR FR24874A patent/FR1439780A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4445133A (en) * | 1980-08-22 | 1984-04-24 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4325388B1 (en) | 1968-11-01 |
| NL6408263A (en) | 1966-01-19 |
| DE1514264A1 (en) | 1969-08-28 |
| FR1439780A (en) | 1966-05-20 |
| SE337431B (en) | 1971-08-09 |
| DE1514264B2 (en) | 1976-09-02 |
| CH430884A (en) | 1967-02-28 |
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