GB1044606A - Improvements in or relating to multi-layer capacitors - Google Patents
Improvements in or relating to multi-layer capacitorsInfo
- Publication number
- GB1044606A GB1044606A GB2764365A GB2764365A GB1044606A GB 1044606 A GB1044606 A GB 1044606A GB 2764365 A GB2764365 A GB 2764365A GB 2764365 A GB2764365 A GB 2764365A GB 1044606 A GB1044606 A GB 1044606A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- masses
- deposited
- electrode
- cathodic sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 title abstract 3
- 238000004544 sputter deposition Methods 0.000 abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000007743 anodising Methods 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 238000002048 anodisation reaction Methods 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052735 hafnium Inorganic materials 0.000 abstract 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 abstract 1
- 239000011133 lead Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 239000010955 niobium Substances 0.000 abstract 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 239000011135 tin Substances 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/10—Metal-oxide dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
1,044,606. Capacitors. INTERNATIONAL BUSINESS MACHINES CORPORATION. June 30, 1965 [June 30, 1964], No. 27643/65. Heading H1M. In the manufacture of the multi-layer capacitor shown, a layer 11 and two relatively small masses 12 and 13 of anodisable metal, e.g. tantalum, niobium, zirconium, titanium, hafnium and aluminium are deposited by cathodic sputtering on a glass or other refractory substrate 14. An oxide layer 15 is formed on layer 11 by anodising, masses 12 and 13 being masked. Counter-electrode 16, of nickel, gold, silver, tin, lead or copper, is applied by vapour deposition to the oxide layer and covers now unmasked portions of the masses 12 and 13. An insulating covering 17 of e.g. silicon monoxide or dioxide is vapour deposited on to layer 16 and portions of masses 12 and 13. When a second layer 18 of anodisable metal, deposited on layer 17 by cathodic sputtering, is subjected to anodising to form oxide layer 19, the anodization voltage which otherwise might have led to breakdown of the first dielectric layer, now results in the formation of oxide layers 20 and 21 on the exposed surfaces of masses 12 and 13. Conductive films 23 and 24 are deposited by cathodic sputtering to penetrate films 20 and 21 and make electrical contact with masses 12 and 13, thereby connecting electrode 16 to subsequently vacuum deposited electrode 22. Finally second insulating covering 25 is applied.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US37914164A | 1964-06-30 | 1964-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1044606A true GB1044606A (en) | 1966-10-05 |
Family
ID=23495985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2764365A Expired GB1044606A (en) | 1964-06-30 | 1965-06-30 | Improvements in or relating to multi-layer capacitors |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1514023A1 (en) |
| GB (1) | GB1044606A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012222432A1 (en) | 2012-12-06 | 2014-06-12 | Robert Bosch Gmbh | Substrate i.e. printed circuit board, for supporting switching circuit, has carrier layer arranged for supporting switching circuit main portion, and first capacitor plate that is formed on opposite side of dielectric |
-
1965
- 1965-06-26 DE DE19651514023 patent/DE1514023A1/en active Pending
- 1965-06-30 GB GB2764365A patent/GB1044606A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1514023A1 (en) | 1969-05-14 |
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