GB1029673A - Improvements in or relating to photo-sensitive electronic cells - Google Patents
Improvements in or relating to photo-sensitive electronic cellsInfo
- Publication number
- GB1029673A GB1029673A GB3202962A GB3202962A GB1029673A GB 1029673 A GB1029673 A GB 1029673A GB 3202962 A GB3202962 A GB 3202962A GB 3202962 A GB3202962 A GB 3202962A GB 1029673 A GB1029673 A GB 1029673A
- Authority
- GB
- United Kingdom
- Prior art keywords
- slab
- contacts
- bath
- etched
- hno3
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 4
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 abstract 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 abstract 2
- 239000002253 acid Substances 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- 238000000866 electrolytic etching Methods 0.000 abstract 2
- 230000000873 masking effect Effects 0.000 abstract 2
- 229910017604 nitric acid Inorganic materials 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004677 Nylon Substances 0.000 abstract 1
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000007598 dipping method Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- YDLRCMNQRQILLP-UHFFFAOYSA-N ethane-1,2-diol;nitric acid Chemical compound OCCO.O[N+]([O-])=O YDLRCMNQRQILLP-UHFFFAOYSA-N 0.000 abstract 1
- HWSZZLVAJGOAAY-UHFFFAOYSA-L lead(II) chloride Chemical compound Cl[Pb]Cl HWSZZLVAJGOAAY-UHFFFAOYSA-L 0.000 abstract 1
- 229920001778 nylon Polymers 0.000 abstract 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 abstract 1
- 239000004926 polymethyl methacrylate Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 229910000029 sodium carbonate Inorganic materials 0.000 abstract 1
- 235000011008 sodium phosphates Nutrition 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
A slab of semiconductor material for use as an element of a photosensitive cell is provided with thickened regions by masking such regions of a blank slab with an insulating mask which is thicker than the amount by which the thickened regions are to protrude above the active surface of the finished slab, and the unmasked region of the blank is electrolytically etched until the desired thickness is obtained. As shown, blank In-Sb slabs 3 each 5 x 1.5 mms x 100 m are placed over a Pt strip anode 4 in a polymethylmethacrylate jig 1 including removable masking cheeks 5 of the same material having edges 7 chamfered down to 2 mms and located by nylon screws 6 to overlie the slab margins by 0.5 mm. The loaded assembly is placed in a continuously stirred nitric acid-ethylene glycol bath and electrolytically etched for 3 minutes with a P.D. of 10 volts to reduce the slab thickness to 40 m , the etched surface being brushed at intervals to remove Sb2O3. After removal from the jig, each slab is washed in ethanol and dipped into an HF-HNO3-acetic acid etching solution or lightly lapped with a fine wet abrasive. If the slab is of low resistance material, point contacts 10,11 are formed by soldering on with In-Sb solder Pt wires which have been etched in HNO3. For high resistance material (16 ohm.cm.), Pt strip contacts extending along the whole of the slab margins are provided. These may be formed by flattening a portion of a Pt wire or may be of Pt strip corrugated by passage under a knurled roller. The contacts are cathodically cleaned with an applied P.D. of 12 volts in an alkaline sodium carbonate/phosphat bath and are then flash plated in an acid Cu bath using a Pt anode. The coppered contacts are then "tinned", defluxed in CCl4, and rinsed in ethanol. The electrolytically etched slab is then cleaned by dipping in heated solution used for the electrolytic etching and is then flash coppered in an acid bath, rinsed, heated, fluxed and the tinned Pt contacts soldered on to it by simple contact. The completed device is then defluxed in CCl4, dipped in HNO3 to remove copper from the untinned areas, and then given a finish dip etch in the electrolytic etching solution to reduce the slab thickness by a further 20 to 25 m . The finished device may be given a coating of PbCl2 by vapour deposition to increase its sensitivity. <PICT:1029673/C6-C7/1>
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3202962A GB1029673A (en) | 1962-08-21 | 1962-08-21 | Improvements in or relating to photo-sensitive electronic cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3202962A GB1029673A (en) | 1962-08-21 | 1962-08-21 | Improvements in or relating to photo-sensitive electronic cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1029673A true GB1029673A (en) | 1966-05-18 |
Family
ID=10331996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3202962A Expired GB1029673A (en) | 1962-08-21 | 1962-08-21 | Improvements in or relating to photo-sensitive electronic cells |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1029673A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007015938A2 (en) * | 2005-07-29 | 2007-02-08 | Advanced Micro Devices, Inc. | Method for patterning an underbump metallizattion layer using a dry etc process |
-
1962
- 1962-08-21 GB GB3202962A patent/GB1029673A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007015938A2 (en) * | 2005-07-29 | 2007-02-08 | Advanced Micro Devices, Inc. | Method for patterning an underbump metallizattion layer using a dry etc process |
| WO2007015938A3 (en) * | 2005-07-29 | 2007-03-29 | Advanced Micro Devices Inc | Method for patterning an underbump metallizattion layer using a dry etc process |
| US7585759B2 (en) | 2005-07-29 | 2009-09-08 | Advanced Micro Devices, Inc. | Technique for efficiently patterning an underbump metallization layer using a dry etch process |
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