GB1023789A - Improvements in transistorized detectors,particularly for radio receivers - Google Patents

Improvements in transistorized detectors,particularly for radio receivers

Info

Publication number
GB1023789A
GB1023789A GB2599264A GB2599264A GB1023789A GB 1023789 A GB1023789 A GB 1023789A GB 2599264 A GB2599264 A GB 2599264A GB 2599264 A GB2599264 A GB 2599264A GB 1023789 A GB1023789 A GB 1023789A
Authority
GB
United Kingdom
Prior art keywords
effect transistor
field
amplifier
signals
june
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2599264A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
CSF Compagnie Generale de Telegraphie sans Fil SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSF Compagnie Generale de Telegraphie sans Fil SA filed Critical CSF Compagnie Generale de Telegraphie sans Fil SA
Publication of GB1023789A publication Critical patent/GB1023789A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3052—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D1/00—Demodulation of amplitude-modulated oscillations
    • H03D1/14—Demodulation of amplitude-modulated oscillations by means of non-linear elements having more than two poles
    • H03D1/18—Demodulation of amplitude-modulated oscillations by means of non-linear elements having more than two poles of semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Circuits Of Receivers In General (AREA)
  • Amplifiers (AREA)

Abstract

1,023,789. Field effect transistor amplifier and detector circuits. CSF-COMPAGNIE GENERALE DE TELEGRAPHIE SANS FIL. June 23, 1964 [June 27, 1963], No. 25992/64. Heading H3T. A field-effect transistor is used as a detector, particularly for a radio receiver. As shown in Fig. 3, signals from the I.F. amplifier 21 are coupled by a tuned circuit 22 and components 23, 24 to the gate electrode of a field-effect transistor 25. Amplified and demodulated signals are available at 29. Inversely-acting and forward-acting automatic gain control voltages are available across resistors 32 and 26. In Fig. 6, a double-gate field-effect transistor 42 is used, which may be biased as a linear amplifier by closing switch 45, thus enabling audio signals at P.U. to be amplified.
GB2599264A 1963-06-27 1964-06-23 Improvements in transistorized detectors,particularly for radio receivers Expired GB1023789A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR939589A FR1370679A (en) 1963-06-27 1963-06-27 Improvements to transistorized radio receivers

Publications (1)

Publication Number Publication Date
GB1023789A true GB1023789A (en) 1966-03-23

Family

ID=8807084

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2599264A Expired GB1023789A (en) 1963-06-27 1964-06-23 Improvements in transistorized detectors,particularly for radio receivers

Country Status (4)

Country Link
ES (1) ES301445A1 (en)
FR (1) FR1370679A (en)
GB (1) GB1023789A (en)
NL (1) NL6407222A (en)

Also Published As

Publication number Publication date
FR1370679A (en) 1964-08-28
ES301445A1 (en) 1965-01-16
NL6407222A (en) 1964-12-28

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