GB1020328A - Processing of semiconductor devices - Google Patents
Processing of semiconductor devicesInfo
- Publication number
- GB1020328A GB1020328A GB5052264A GB5052264A GB1020328A GB 1020328 A GB1020328 A GB 1020328A GB 5052264 A GB5052264 A GB 5052264A GB 5052264 A GB5052264 A GB 5052264A GB 1020328 A GB1020328 A GB 1020328A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- slices
- conductor
- devices
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Abstract
1,020,328. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. Dec. 11, 1964, No. 50522/64. Heading H1K. In a method of making a semi-conductor device a semi-conductor body is etched to remove surface contamination, and subsequently lifetime reducing impurity is applied to the surface of the body and diffused into the body. The semi-conductor body must be protected from the action of light between these two steps because the action of light gives rise to surface conditions which inhibit the introduction of lifetime reducing impurities. Resultant devices would have random variations in their switching properties. In the embodiment described silicon slices containing partially formed planar transistors are individually subjected to the following treatment which was carried out in subdued lighting. Each slice is cleaned in boiling concentrated sulphuric acid, washed in de-ionized water, etched in aqueous ammonium bifluoride to remove any oxide film, washed with de-ionized water, and blown dry with an air jet. (At this stage the slices may be stored in the dark in water or in a solution containing free hydrofluoric acid.) Still in subdued lighting the slices are loaded in a vacuum evaporator and gold deposited on one surface of each of the slices and diffused in. A similar treatment may be given to germanium devices but an alternative oxide-removing etchant to aqueous ammonium bifluoride may be needed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB5052264A GB1020328A (en) | 1964-12-11 | 1964-12-11 | Processing of semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB5052264A GB1020328A (en) | 1964-12-11 | 1964-12-11 | Processing of semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1020328A true GB1020328A (en) | 1966-02-16 |
Family
ID=10456209
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB5052264A Expired GB1020328A (en) | 1964-12-11 | 1964-12-11 | Processing of semiconductor devices |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1020328A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1988567A1 (en) * | 2006-02-01 | 2008-11-05 | Tohoku University | Semiconductor device manufacturing method and method for reducing microroughness of semiconductor surface |
-
1964
- 1964-12-11 GB GB5052264A patent/GB1020328A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1988567A1 (en) * | 2006-02-01 | 2008-11-05 | Tohoku University | Semiconductor device manufacturing method and method for reducing microroughness of semiconductor surface |
EP1988567A4 (en) * | 2006-02-01 | 2009-12-02 | Univ Tohoku | Semiconductor device manufacturing method and method for reducing microroughness of semiconductor surface |
US8268735B2 (en) | 2006-02-01 | 2012-09-18 | Tohoku University | Semiconductor device manufacturing method and method for reducing microroughness of semiconductor surface |
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