GB1010404A - Improvements in or relating to semiconductor devices - Google Patents
Improvements in or relating to semiconductor devicesInfo
- Publication number
- GB1010404A GB1010404A GB2424564A GB2424564A GB1010404A GB 1010404 A GB1010404 A GB 1010404A GB 2424564 A GB2424564 A GB 2424564A GB 2424564 A GB2424564 A GB 2424564A GB 1010404 A GB1010404 A GB 1010404A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- type
- layer
- wafer
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 230000005669 field effect Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
1,010,404. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. June 11, 1964, No. 24245/64. Heading H1K. In a field effect transistor a diffused region of one conductivity type in a body of the opposite conductivity type is covered by an epitaxial layer of semi-conductor of the opposite conductivity type. As shown, Fig. 2, a plurality of field effect transistors are produced by epitaxially depositing a layer 1 of N-type silicon on to a wafer 2 of N-type silicon of lower resistivtiy. A plurality of P-type regions 3 (shown in section) are produced in the epitaxial layer by masking with an oxide layer and diffusing-in boron. Each P-type region 3 completely surrounds a small rectangular region 4 of N-type material. As shown, Fig. 5, a layer 5 of N-type silicon is epitaxially deposited on layer 1 and a second boron diffusion produces P-type regions 6 overlying and contacting the first diffused regions. The rectangular N-type region 7 surrounded by region 6 is larger than region 4 and an ohmic contact 9 is produced by diffusing phosphorus into this region. Aluminium electrodes are deposited on part 8 of region 6 and on region 9 and are alloyed to the wafer. The wafer is then divided into individual units which may be mounted on a header or in a thin film circuit, region 4 forming the channel, region 6 (and 3) the gate, wafer 2 the source and contact 9 the drain. The conductivity types of the regions may be reversed and the semi-conductor material may be germanium, deposited silicon oxide being used for the diffusion masks.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2424564A GB1010404A (en) | 1964-05-22 | 1964-06-11 | Improvements in or relating to semiconductor devices |
| DEP1270A DE1270186B (en) | 1964-05-22 | 1965-05-19 | Planar diffusion process for manufacturing a field effect transistor |
| NL6506463A NL6506463A (en) | 1964-05-22 | 1965-05-20 | |
| BE664241D BE664241A (en) | 1964-05-22 | 1965-05-21 | |
| FR17950A FR87939E (en) | 1963-11-15 | 1965-05-21 | Semiconductor device manufacturing |
| DE19651514763 DE1514763B2 (en) | 1964-05-22 | 1965-06-09 | METHOD OF PRODUCING A BARRIER LAYER FIELD EFFECT TRANSISTOR |
| FR47598A FR89862E (en) | 1963-11-15 | 1966-01-28 | Semiconductor device manufacturing |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2122064 | 1964-05-22 | ||
| GB2424564A GB1010404A (en) | 1964-05-22 | 1964-06-11 | Improvements in or relating to semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1010404A true GB1010404A (en) | 1965-11-17 |
Family
ID=26255217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2424564A Expired GB1010404A (en) | 1963-11-15 | 1964-06-11 | Improvements in or relating to semiconductor devices |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE664241A (en) |
| DE (2) | DE1270186B (en) |
| GB (1) | GB1010404A (en) |
| NL (1) | NL6506463A (en) |
-
1964
- 1964-06-11 GB GB2424564A patent/GB1010404A/en not_active Expired
-
1965
- 1965-05-19 DE DEP1270A patent/DE1270186B/en active Pending
- 1965-05-20 NL NL6506463A patent/NL6506463A/xx unknown
- 1965-05-21 BE BE664241D patent/BE664241A/xx unknown
- 1965-06-09 DE DE19651514763 patent/DE1514763B2/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE1514763A1 (en) | 1969-05-08 |
| DE1270186B (en) | 1968-06-12 |
| DE1514763B2 (en) | 1972-03-02 |
| BE664241A (en) | 1965-11-22 |
| NL6506463A (en) | 1965-11-23 |
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