GB1009811A - Semiconductor structures - Google Patents
Semiconductor structuresInfo
- Publication number
- GB1009811A GB1009811A GB5128463A GB5128463A GB1009811A GB 1009811 A GB1009811 A GB 1009811A GB 5128463 A GB5128463 A GB 5128463A GB 5128463 A GB5128463 A GB 5128463A GB 1009811 A GB1009811 A GB 1009811A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- wafer
- region
- emitter
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 238000005275 alloying Methods 0.000 abstract 3
- 239000011888 foil Substances 0.000 abstract 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 3
- 229910052737 gold Inorganic materials 0.000 abstract 3
- 239000010931 gold Substances 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- 229910052787 antimony Inorganic materials 0.000 abstract 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical group C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 abstract 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- VMXJCRHCUWKQCB-UHFFFAOYSA-N NPNP Chemical compound NPNP VMXJCRHCUWKQCB-UHFFFAOYSA-N 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 150000004820 halides Chemical class 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000005049 silicon tetrachloride Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Abstract
1,009,811. Semi-conductor devices. WESTINGHOUSE ELECTRIC CORPORATION. Dec. 31, 1963, No. 51284/63. Heading H1K. An ohmic contact is made to a diffused layer of one conductivity type in a region of the opposite conductivity type by depositing an epitaxial layer on the diffused layer and fusing an ohmic contact to the epitaxial layer. As shown, Fig. 7, an NPNP switching device is manufactured by diffusing indium, gallium, aluminium, or boron into the surface of a circular N-type silicon wafer to produce P-type surface regions 17, 18. The top surface of the wafer is oxidized and a photolithographic technique is used to produce a mask through which antimony, arsenic, or phosphorus is diffused to produce the annular emitter region 28. The remaining oxide layer is removed and an epitaxial layer 36 of degenerate N-type silicon is deposited over the entire top surface of the wafer by decomposition of silicon tetrachloride and a chloride or other halide of the doping material carried in a hydrogen stream. The sides of the emitter region are then isolated from the surrounding regions by etching annular grooves 40, 42. The epitazial layer and part of the surface of the gate region 17 are also removed by etching and ohmic contacts are produced by alloying a foil 48 of gold containing antimony, arsenic or phosphorus to the epitazial layer convering the emitter region, and alloying foils 52, 54 of gold containing boron, aluminium, gallium or indium to the exposed surface 43 of region 17 and to the underside of the wafer respectively. In a second embodiment, Fig. 10, the diffused regions 17, 18, and 28 are produced as in the first embodiment, an oxide layer 60 is formed over the entire surface of the wafer, an annular window is etched in the layer to expose the emitter region 28 and a degenerate N-type silicon epitaxial layer 62 is deposited on top of the oxide layer so that it makes contact with the emitter region 28 through the window. A window is etched in the epitaxial and oxide layers 62, 60 to expose the gate region within the emitter ring, and the oxide layer is also removed from the lower face of the wafer. Ohmic contacts 64, 68, 70 are made to the emitter, gate, and collector electrodes by alloying doped gold foils to the wafer. The original wafer may be a slice of single crystal or dendritic crystal material. Specifications 889,058 and 913,674 are referred to.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25381863A | 1963-01-25 | 1963-01-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1009811A true GB1009811A (en) | 1965-11-10 |
Family
ID=22961829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5128463A Expired GB1009811A (en) | 1963-01-25 | 1963-12-31 | Semiconductor structures |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE642969A (en) |
| CH (1) | CH416841A (en) |
| DE (1) | DE1439959B2 (en) |
| GB (1) | GB1009811A (en) |
-
1963
- 1963-12-31 GB GB5128463A patent/GB1009811A/en not_active Expired
-
1964
- 1964-01-18 DE DE19641439959 patent/DE1439959B2/en active Pending
- 1964-01-21 CH CH68264A patent/CH416841A/en unknown
- 1964-01-24 BE BE642969A patent/BE642969A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE1439959A1 (en) | 1968-12-19 |
| BE642969A (en) | 1964-05-15 |
| DE1439959B2 (en) | 1971-05-06 |
| CH416841A (en) | 1966-07-15 |
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