GB1004988A - Improvements in or relating to devices employing thin magnetic films - Google Patents
Improvements in or relating to devices employing thin magnetic filmsInfo
- Publication number
- GB1004988A GB1004988A GB3632461A GB3632461A GB1004988A GB 1004988 A GB1004988 A GB 1004988A GB 3632461 A GB3632461 A GB 3632461A GB 3632461 A GB3632461 A GB 3632461A GB 1004988 A GB1004988 A GB 1004988A
- Authority
- GB
- United Kingdom
- Prior art keywords
- conductors
- coupled
- plane
- word
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
1,004,988. Thin film storage matrices. INTERNATIONAL COMPUTERS & TABULATORS Ltd. Sept. 21, 1962 [Oct. 10, 1961], No. 36324/61. Heading H3B. A thin film element receives a driving pulse from a thin film driving element by means of a low inductance loop which couples the elements. In the thin film memory described the storage areas are defined in thin magnetic films 22 by digit conductors 25, sense conductors 26 and word conductors 24. Each word conductor 24 is connected to the aluminium substrate 21 at each of its ends and is also coupled to a driving element constituted by an area of a second film 23. Each driving element is coupled to three further conductors; a bias conductor 29 which is coupled to all driving elements of the matrix, a plane select conductor 30 coupled to each driving element of a plane and a word position conductor 31 which is coupled to one element of each plane. The bias conductor 29 biases each driving element well into a hard direction so that currents in both conductors 30 and 31 are required to switch the element and thus drive the elements of the appropriate word on film 22 to a position within a few degrees of the hard direction. The elements are then read out on sense conductors 26 or written into by currents in the digit conductors 25. The conducting substrates 21 may be replaced by insulating boards if return conductors are provided for the word conductors 24. The planes of the three-dimensional matrix may be arranged parallel to each other with the conductors extending, with their insulating layers 13, 14, 15, 16, 17 and 18, in serpentine manner from plane to plane. The present driving method may also be applied to a shift register or to logical circuits. To produce adequate drive field the film 23 may have twice the thickness of film 22.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL284145D NL284145A (en) | 1961-10-10 | ||
GB3632461A GB1004988A (en) | 1961-10-10 | 1961-10-10 | Improvements in or relating to devices employing thin magnetic films |
FR911109A FR1334876A (en) | 1961-10-10 | 1962-10-03 | Magnetic memory |
DE19621424515 DE1424515A1 (en) | 1961-10-10 | 1962-10-08 | Magnetic storage of thin layers |
CH1189762A CH419240A (en) | 1961-10-10 | 1962-10-10 | Magnetic memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3632461A GB1004988A (en) | 1961-10-10 | 1961-10-10 | Improvements in or relating to devices employing thin magnetic films |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1004988A true GB1004988A (en) | 1965-09-22 |
Family
ID=31198384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3632461A Expired GB1004988A (en) | 1961-10-10 | 1961-10-10 | Improvements in or relating to devices employing thin magnetic films |
Country Status (4)
Country | Link |
---|---|
CH (1) | CH419240A (en) |
DE (1) | DE1424515A1 (en) |
GB (1) | GB1004988A (en) |
NL (1) | NL284145A (en) |
-
0
- NL NL284145D patent/NL284145A/xx unknown
-
1961
- 1961-10-10 GB GB3632461A patent/GB1004988A/en not_active Expired
-
1962
- 1962-10-08 DE DE19621424515 patent/DE1424515A1/en active Pending
- 1962-10-10 CH CH1189762A patent/CH419240A/en unknown
Also Published As
Publication number | Publication date |
---|---|
DE1424515A1 (en) | 1969-12-11 |
NL284145A (en) | |
CH419240A (en) | 1966-08-31 |
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