GB0915143D0 - Backside illuminated imager and method of fabricating the same - Google Patents

Backside illuminated imager and method of fabricating the same

Info

Publication number
GB0915143D0
GB0915143D0 GBGB0915143.2A GB0915143A GB0915143D0 GB 0915143 D0 GB0915143 D0 GB 0915143D0 GB 0915143 A GB0915143 A GB 0915143A GB 0915143 D0 GB0915143 D0 GB 0915143D0
Authority
GB
United Kingdom
Prior art keywords
fabricating
same
backside illuminated
illuminated imager
imager
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB0915143.2A
Other versions
GB2459237A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aptina Imaging Corp
Original Assignee
Aptina Imaging Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aptina Imaging Corp filed Critical Aptina Imaging Corp
Publication of GB0915143D0 publication Critical patent/GB0915143D0/en
Publication of GB2459237A publication Critical patent/GB2459237A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H01L27/14632—
    • H01L27/14634—
    • H01L27/14636—
    • H01L27/14687—
    • H01L27/1469—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
GB0915143A 2007-03-02 2008-02-29 Backside illuminated imager and method of fabricating the same Withdrawn GB2459237A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/712,996 US7879638B2 (en) 2007-03-02 2007-03-02 Backside illuminated imager and method of fabricating the same
PCT/US2008/055433 WO2008109405A2 (en) 2007-03-02 2008-02-29 Backside illuminated imager and method of fabricating the same

Publications (2)

Publication Number Publication Date
GB0915143D0 true GB0915143D0 (en) 2009-10-07
GB2459237A GB2459237A (en) 2009-10-21

Family

ID=39522028

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0915143A Withdrawn GB2459237A (en) 2007-03-02 2008-02-29 Backside illuminated imager and method of fabricating the same

Country Status (6)

Country Link
US (1) US7879638B2 (en)
KR (1) KR20090128439A (en)
CN (1) CN101689555A (en)
GB (1) GB2459237A (en)
TW (1) TWI389330B (en)
WO (1) WO2008109405A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5151375B2 (en) * 2007-10-03 2013-02-27 ソニー株式会社 Solid-state imaging device, manufacturing method thereof, and imaging device
US20100026824A1 (en) * 2008-07-29 2010-02-04 Shenlin Chen Image sensor with reduced red light crosstalk
JP2010114409A (en) * 2008-10-10 2010-05-20 Sony Corp Soi substrate and method for manufacturing the same, solid-state image pickup device and method for manufacturing the same, and image pickup device
JP5262823B2 (en) * 2009-02-23 2013-08-14 ソニー株式会社 Solid-state imaging device and electronic apparatus
JP5418044B2 (en) * 2009-07-30 2014-02-19 ソニー株式会社 Solid-state imaging device and manufacturing method thereof
JP5450633B2 (en) * 2009-09-09 2014-03-26 株式会社東芝 Solid-state imaging device and manufacturing method thereof
US20110175999A1 (en) * 2010-01-15 2011-07-21 Mccormack Kenneth Video system and method for operating same
US8569856B2 (en) * 2011-11-03 2013-10-29 Omnivision Technologies, Inc. Pad design for circuit under pad in semiconductor devices
US11137581B2 (en) 2018-09-27 2021-10-05 Himax Technologies Limited Wafer-level homogeneous bonding optical structure and method to form the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7232714B2 (en) * 2001-11-30 2007-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7242069B2 (en) 2003-05-05 2007-07-10 Udt Sensors, Inc. Thin wafer detectors with improved radiation damage and crosstalk characteristics
US7064406B2 (en) * 2003-09-03 2006-06-20 Micron Technology, Inc. Supression of dark current in a photosensor for imaging
US6908839B2 (en) * 2003-09-17 2005-06-21 Micron Technology, Inc. Method of producing an imaging device
US20050274988A1 (en) * 2004-06-01 2005-12-15 Hong Sungkwon C Imager with reflector mirrors
US8049293B2 (en) 2005-03-07 2011-11-01 Sony Corporation Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device
DE102005026242B4 (en) 2005-06-07 2007-05-03 Austriamicrosystems Ag Photodiode with semiconductor integrated circuit and method of manufacture
US7271025B2 (en) * 2005-07-12 2007-09-18 Micron Technology, Inc. Image sensor with SOI substrate
US7432148B2 (en) * 2005-08-31 2008-10-07 Micron Technology, Inc. Shallow trench isolation by atomic-level silicon reconstruction
US7619266B2 (en) * 2006-01-09 2009-11-17 Aptina Imaging Corporation Image sensor with improved surface depletion
US7682930B2 (en) * 2006-06-09 2010-03-23 Aptina Imaging Corporation Method of forming elevated photosensor and resulting structure

Also Published As

Publication number Publication date
CN101689555A (en) 2010-03-31
US7879638B2 (en) 2011-02-01
WO2008109405A2 (en) 2008-09-12
TW200849633A (en) 2008-12-16
US20080211939A1 (en) 2008-09-04
GB2459237A (en) 2009-10-21
KR20090128439A (en) 2009-12-15
WO2008109405A3 (en) 2008-11-20
TWI389330B (en) 2013-03-11

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)