GB0913919D0 - Method of forming an electrical circuit using fullerene derivatives - Google Patents

Method of forming an electrical circuit using fullerene derivatives

Info

Publication number
GB0913919D0
GB0913919D0 GBGB0913919.7A GB0913919A GB0913919D0 GB 0913919 D0 GB0913919 D0 GB 0913919D0 GB 0913919 A GB0913919 A GB 0913919A GB 0913919 D0 GB0913919 D0 GB 0913919D0
Authority
GB
United Kingdom
Prior art keywords
forming
electrical circuit
fullerene derivatives
selected region
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0913919.7A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Birmingham
Original Assignee
University of Birmingham
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Birmingham filed Critical University of Birmingham
Priority to GBGB0913919.7A priority Critical patent/GB0913919D0/en
Publication of GB0913919D0 publication Critical patent/GB0913919D0/en
Priority to PCT/GB2010/001409 priority patent/WO2011018601A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/094—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by transforming insulators into conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07536—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07537—Techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The present invention resides in a method of forming an electrical circuit, comprising forming on a substrate a non-conducting film having as its major constituent one or more fullerene derivatives, followed by exposing a selected region of said film to actinic radiation whereby to cause said selected region to become conductive. At least one electrical contact is provided (at any stage of the process) in physical contact with said selected region. The invention also reides in an electrical circuit producible by the above method.
GBGB0913919.7A 2009-08-10 2009-08-10 Method of forming an electrical circuit using fullerene derivatives Ceased GB0913919D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GBGB0913919.7A GB0913919D0 (en) 2009-08-10 2009-08-10 Method of forming an electrical circuit using fullerene derivatives
PCT/GB2010/001409 WO2011018601A1 (en) 2009-08-10 2010-07-26 Method of forming an electrical circuit using fullerene derivatives

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0913919.7A GB0913919D0 (en) 2009-08-10 2009-08-10 Method of forming an electrical circuit using fullerene derivatives

Publications (1)

Publication Number Publication Date
GB0913919D0 true GB0913919D0 (en) 2009-09-16

Family

ID=41129887

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0913919.7A Ceased GB0913919D0 (en) 2009-08-10 2009-08-10 Method of forming an electrical circuit using fullerene derivatives

Country Status (2)

Country Link
GB (1) GB0913919D0 (en)
WO (1) WO2011018601A1 (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008507080A (en) * 2004-05-07 2008-03-06 エイコス・インコーポレーテッド Patterning of carbon nanotube coatings by selective chemical modification
GB0420700D0 (en) 2004-09-17 2004-10-20 Univ Birmingham Novel resist material
GB0420702D0 (en) 2004-09-17 2004-10-20 Univ Birmingham Use of methanofullerene derivatives as resist materials and method for forming a resist layer
KR101102133B1 (en) * 2004-10-27 2012-01-02 삼성전자주식회사 A manufacturing method of a thin film transistor and a display element comprising a thin film transistor manufactured by the method
WO2006084088A1 (en) * 2005-01-31 2006-08-10 University Of Connecticut Conjugated polymer fiber, preparation and use thereof
TWI279008B (en) * 2005-12-26 2007-04-11 Ind Tech Res Inst Thin film transistor, device electrode thereof and method of forming the same

Also Published As

Publication number Publication date
WO2011018601A1 (en) 2011-02-17

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)