GB0822680D0 - Pixel array with shared circuitry - Google Patents
Pixel array with shared circuitryInfo
- Publication number
- GB0822680D0 GB0822680D0 GBGB0822680.5A GB0822680A GB0822680D0 GB 0822680 D0 GB0822680 D0 GB 0822680D0 GB 0822680 A GB0822680 A GB 0822680A GB 0822680 D0 GB0822680 D0 GB 0822680D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- pixel array
- shared circuitry
- circuitry
- shared
- pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
- H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0822680.5A GB2466213B (en) | 2008-12-12 | 2008-12-12 | Pixel array with shared readout circuitry |
US12/544,755 US8334491B2 (en) | 2008-12-12 | 2009-08-20 | Pixel array with shared readout circuitry |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0822680.5A GB2466213B (en) | 2008-12-12 | 2008-12-12 | Pixel array with shared readout circuitry |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0822680D0 true GB0822680D0 (en) | 2009-01-21 |
GB2466213A GB2466213A (en) | 2010-06-16 |
GB2466213B GB2466213B (en) | 2013-03-06 |
Family
ID=40326000
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0822680.5A Active GB2466213B (en) | 2008-12-12 | 2008-12-12 | Pixel array with shared readout circuitry |
Country Status (2)
Country | Link |
---|---|
US (1) | US8334491B2 (en) |
GB (1) | GB2466213B (en) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2466213B (en) * | 2008-12-12 | 2013-03-06 | Cmosis Nv | Pixel array with shared readout circuitry |
JP5500007B2 (en) * | 2010-09-03 | 2014-05-21 | ソニー株式会社 | Solid-state imaging device and camera system |
US8829407B2 (en) * | 2010-10-19 | 2014-09-09 | Aptina Imaging Corporation | Imaging systems and methods including pixel arrays with reduced numbers of metal lines and control signals |
KR20120047368A (en) * | 2010-11-02 | 2012-05-14 | 삼성전자주식회사 | Image sensor |
CN102158663B (en) * | 2011-04-15 | 2013-09-11 | 北京思比科微电子技术股份有限公司 | CMOS (Complementary Metal Oxide Semiconductor) image sensor pixel and control time sequence thereof |
CN102184931B (en) * | 2011-04-19 | 2013-07-17 | 格科微电子(上海)有限公司 | Image sensor |
US8629926B2 (en) | 2011-11-04 | 2014-01-14 | Honeywell International, Inc. | Imaging apparatus comprising image sensor array having shared global shutter circuitry |
US8710420B2 (en) * | 2011-11-08 | 2014-04-29 | Aptina Imaging Corporation | Image sensor pixels with junction gate photodiodes |
CN102595057B (en) * | 2012-02-27 | 2014-09-24 | 北京思比科微电子技术股份有限公司 | CMOS (complementary metal-oxide-semiconductor transistor) image sensor pixel and control time sequence thereof |
BR112014031931A2 (en) | 2012-06-20 | 2017-06-27 | Koninklijke Philips Nv | x-ray detector, clinical radiographic examination system, and method for radiographic imaging |
EP2738812B8 (en) | 2012-11-29 | 2018-07-18 | ams Sensors Belgium BVBA | A pixel array |
US20140347442A1 (en) * | 2013-05-23 | 2014-11-27 | Yibing M. WANG | Rgbz pixel arrays, imaging devices, controllers & methods |
JP6180882B2 (en) * | 2013-10-31 | 2017-08-16 | ソニーセミコンダクタソリューションズ株式会社 | Solid-state imaging device, signal processing device, and electronic device |
JP6176062B2 (en) * | 2013-11-06 | 2017-08-09 | ソニー株式会社 | Solid-state imaging device, driving method thereof, and electronic apparatus |
FR3017019A1 (en) | 2014-01-24 | 2015-07-31 | St Microelectronics Grenoble 2 | |
DE102015003134B4 (en) * | 2014-04-01 | 2017-04-06 | Viimagic Gesellschaft mit beschränkter Haftung | Global shutter pixel and correction method |
DE102015109878B3 (en) * | 2015-06-19 | 2016-07-28 | Basler Ag | Correction of a patterned image defect |
US9801593B2 (en) | 2015-12-14 | 2017-10-31 | Dental Imaging Technologies Corporation | Intraoral X-ray imaging sensor and readout |
KR102695388B1 (en) | 2019-02-12 | 2024-08-19 | 삼성전자주식회사 | Image sensor comprising digital pixel |
CN112712067A (en) * | 2021-01-22 | 2021-04-27 | 敦泰电子(深圳)有限公司 | Optical sensor, optical fingerprint module and electronic equipment |
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US6133954A (en) * | 1996-03-14 | 2000-10-17 | Tritech Microelectronics, Ltd. | Integrated circuit color chip with cells with integral color filters including triplets of photodiodes with each having integrated therewith transistors for reading from and writing to the photodiode and methods of manufacture and operation thereof |
US5793071A (en) * | 1996-09-27 | 1998-08-11 | Kabushiki Kaisha Toshiba | Solid-State imaging device |
US6107655A (en) * | 1997-08-15 | 2000-08-22 | Eastman Kodak Company | Active pixel image sensor with shared amplifier read-out |
US7057150B2 (en) * | 1998-03-16 | 2006-06-06 | Panavision Imaging Llc | Solid state imager with reduced number of transistors per pixel |
US6977684B1 (en) * | 1998-04-30 | 2005-12-20 | Canon Kabushiki Kaisha | Arrangement of circuits in pixels, each circuit shared by a plurality of pixels, in image sensing apparatus |
US6043478A (en) * | 1998-06-25 | 2000-03-28 | Industrial Technology Research Institute | Active pixel sensor with shared readout structure |
US6900836B2 (en) * | 2001-02-19 | 2005-05-31 | Eastman Kodak Company | Correcting defects in a digital image caused by a pre-existing defect in a pixel of an image sensor |
US6815787B1 (en) * | 2002-01-08 | 2004-11-09 | Taiwan Semiconductor Manufacturing Company | Grid metal design for large density CMOS image sensor |
US6625802B2 (en) * | 2002-02-01 | 2003-09-23 | Intel Corporation | Method for modifying a chip layout to minimize within-die CD variations caused by flare variations in EUV lithography |
US7361881B2 (en) * | 2002-03-13 | 2008-04-22 | Oy Ajat Ltd | Ganged detector pixel, photon/pulse counting radiation imaging device |
JP2005005573A (en) * | 2003-06-13 | 2005-01-06 | Fujitsu Ltd | Image pickup device |
JP4381063B2 (en) * | 2003-08-18 | 2009-12-09 | 東芝モバイルディスプレイ株式会社 | Array substrate and flat display device |
US7087883B2 (en) * | 2004-02-04 | 2006-08-08 | Omnivision Technologies, Inc. | CMOS image sensor using shared transistors between pixels with dual pinned photodiode |
JP2006005711A (en) * | 2004-06-18 | 2006-01-05 | Iwate Toshiba Electronics Co Ltd | Cmos image sensor |
WO2006025079A1 (en) * | 2004-07-20 | 2006-03-09 | Fujitsu Limited | Cmos imaging element |
JP4492250B2 (en) * | 2004-08-11 | 2010-06-30 | ソニー株式会社 | Solid-state image sensor |
KR100674923B1 (en) * | 2004-12-03 | 2007-01-26 | 삼성전자주식회사 | CMOS image sensor sharing readout circuits between adjacent pixels |
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CN101401207A (en) * | 2006-03-14 | 2009-04-01 | (株)赛丽康 | Pixel array structure for CMOS image sensor and method of the same |
US7667747B2 (en) * | 2006-03-15 | 2010-02-23 | Qualcomm Incorporated | Processing of sensor values in imaging systems |
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US7924333B2 (en) * | 2007-08-17 | 2011-04-12 | Aptina Imaging Corporation | Method and apparatus providing shared pixel straight gate architecture |
US7989749B2 (en) * | 2007-10-05 | 2011-08-02 | Aptina Imaging Corporation | Method and apparatus providing shared pixel architecture |
KR100858033B1 (en) * | 2007-10-15 | 2008-09-10 | (주)실리콘화일 | 4t-4s step & repeat unit pixel and image sensor including the unit pixel |
GB2466213B (en) * | 2008-12-12 | 2013-03-06 | Cmosis Nv | Pixel array with shared readout circuitry |
-
2008
- 2008-12-12 GB GB0822680.5A patent/GB2466213B/en active Active
-
2009
- 2009-08-20 US US12/544,755 patent/US8334491B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
GB2466213B (en) | 2013-03-06 |
GB2466213A (en) | 2010-06-16 |
US8334491B2 (en) | 2012-12-18 |
US20100148037A1 (en) | 2010-06-17 |
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