GB0822680D0 - Pixel array with shared circuitry - Google Patents

Pixel array with shared circuitry

Info

Publication number
GB0822680D0
GB0822680D0 GBGB0822680.5A GB0822680A GB0822680D0 GB 0822680 D0 GB0822680 D0 GB 0822680D0 GB 0822680 A GB0822680 A GB 0822680A GB 0822680 D0 GB0822680 D0 GB 0822680D0
Authority
GB
United Kingdom
Prior art keywords
pixel array
shared circuitry
circuitry
shared
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB0822680.5A
Other versions
GB2466213B (en
GB2466213A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMOSIS BVBA
Original Assignee
CMOSIS BVBA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CMOSIS BVBA filed Critical CMOSIS BVBA
Priority to GB0822680.5A priority Critical patent/GB2466213B/en
Publication of GB0822680D0 publication Critical patent/GB0822680D0/en
Priority to US12/544,755 priority patent/US8334491B2/en
Publication of GB2466213A publication Critical patent/GB2466213A/en
Application granted granted Critical
Publication of GB2466213B publication Critical patent/GB2466213B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14609Pixel-elements with integrated switching, control, storage or amplification elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14621Colour filter arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14641Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
GB0822680.5A 2008-12-12 2008-12-12 Pixel array with shared readout circuitry Active GB2466213B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB0822680.5A GB2466213B (en) 2008-12-12 2008-12-12 Pixel array with shared readout circuitry
US12/544,755 US8334491B2 (en) 2008-12-12 2009-08-20 Pixel array with shared readout circuitry

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0822680.5A GB2466213B (en) 2008-12-12 2008-12-12 Pixel array with shared readout circuitry

Publications (3)

Publication Number Publication Date
GB0822680D0 true GB0822680D0 (en) 2009-01-21
GB2466213A GB2466213A (en) 2010-06-16
GB2466213B GB2466213B (en) 2013-03-06

Family

ID=40326000

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0822680.5A Active GB2466213B (en) 2008-12-12 2008-12-12 Pixel array with shared readout circuitry

Country Status (2)

Country Link
US (1) US8334491B2 (en)
GB (1) GB2466213B (en)

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KR20120047368A (en) * 2010-11-02 2012-05-14 삼성전자주식회사 Image sensor
CN102158663B (en) * 2011-04-15 2013-09-11 北京思比科微电子技术股份有限公司 CMOS (Complementary Metal Oxide Semiconductor) image sensor pixel and control time sequence thereof
CN102184931B (en) * 2011-04-19 2013-07-17 格科微电子(上海)有限公司 Image sensor
US8629926B2 (en) 2011-11-04 2014-01-14 Honeywell International, Inc. Imaging apparatus comprising image sensor array having shared global shutter circuitry
US8710420B2 (en) * 2011-11-08 2014-04-29 Aptina Imaging Corporation Image sensor pixels with junction gate photodiodes
CN102595057B (en) * 2012-02-27 2014-09-24 北京思比科微电子技术股份有限公司 CMOS (complementary metal-oxide-semiconductor transistor) image sensor pixel and control time sequence thereof
BR112014031931A2 (en) 2012-06-20 2017-06-27 Koninklijke Philips Nv x-ray detector, clinical radiographic examination system, and method for radiographic imaging
EP2738812B8 (en) 2012-11-29 2018-07-18 ams Sensors Belgium BVBA A pixel array
US20140347442A1 (en) * 2013-05-23 2014-11-27 Yibing M. WANG Rgbz pixel arrays, imaging devices, controllers & methods
JP6180882B2 (en) * 2013-10-31 2017-08-16 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging device, signal processing device, and electronic device
JP6176062B2 (en) * 2013-11-06 2017-08-09 ソニー株式会社 Solid-state imaging device, driving method thereof, and electronic apparatus
FR3017019A1 (en) 2014-01-24 2015-07-31 St Microelectronics Grenoble 2
DE102015003134B4 (en) * 2014-04-01 2017-04-06 Viimagic Gesellschaft mit beschränkter Haftung Global shutter pixel and correction method
DE102015109878B3 (en) * 2015-06-19 2016-07-28 Basler Ag Correction of a patterned image defect
US9801593B2 (en) 2015-12-14 2017-10-31 Dental Imaging Technologies Corporation Intraoral X-ray imaging sensor and readout
KR102695388B1 (en) 2019-02-12 2024-08-19 삼성전자주식회사 Image sensor comprising digital pixel
CN112712067A (en) * 2021-01-22 2021-04-27 敦泰电子(深圳)有限公司 Optical sensor, optical fingerprint module and electronic equipment

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Also Published As

Publication number Publication date
GB2466213B (en) 2013-03-06
GB2466213A (en) 2010-06-16
US8334491B2 (en) 2012-12-18
US20100148037A1 (en) 2010-06-17

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