GB0526073D0 - Apparatus and process for crystal growth - Google Patents

Apparatus and process for crystal growth

Info

Publication number
GB0526073D0
GB0526073D0 GBGB0526073.2A GB0526073A GB0526073D0 GB 0526073 D0 GB0526073 D0 GB 0526073D0 GB 0526073 A GB0526073 A GB 0526073A GB 0526073 D0 GB0526073 D0 GB 0526073D0
Authority
GB
United Kingdom
Prior art keywords
crystal growth
growth
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB0526073.2A
Other versions
GB2433447A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Durham Scientific Crystals Ltd
Original Assignee
Durham Scientific Crystals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Durham Scientific Crystals Ltd filed Critical Durham Scientific Crystals Ltd
Priority to GB0526073A priority Critical patent/GB2433447A/en
Publication of GB0526073D0 publication Critical patent/GB0526073D0/en
Priority to US12/158,114 priority patent/US20090053453A1/en
Priority to PCT/GB2006/004864 priority patent/WO2007072023A1/en
Priority to EP06831438.4A priority patent/EP1969622B1/en
Priority to JP2008546618A priority patent/JP5662001B2/en
Publication of GB2433447A publication Critical patent/GB2433447A/en
Priority to US12/901,780 priority patent/US8968469B2/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB0526073A 2005-12-21 2005-12-21 Bulk single crystal material and method of growth Withdrawn GB2433447A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB0526073A GB2433447A (en) 2005-12-21 2005-12-21 Bulk single crystal material and method of growth
US12/158,114 US20090053453A1 (en) 2005-12-21 2006-12-21 Semiconductor device and method of manufacture thereof
PCT/GB2006/004864 WO2007072023A1 (en) 2005-12-21 2006-12-21 Semiconductor device and method of manufacture thereof
EP06831438.4A EP1969622B1 (en) 2005-12-21 2006-12-21 Semiconductor device and method of manufacture thereof
JP2008546618A JP5662001B2 (en) 2005-12-21 2006-12-21 Semiconductor device and manufacturing method thereof
US12/901,780 US8968469B2 (en) 2005-12-21 2010-10-11 Semiconductor device and method of manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0526073A GB2433447A (en) 2005-12-21 2005-12-21 Bulk single crystal material and method of growth

Publications (2)

Publication Number Publication Date
GB0526073D0 true GB0526073D0 (en) 2006-02-01
GB2433447A GB2433447A (en) 2007-06-27

Family

ID=35840925

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0526073A Withdrawn GB2433447A (en) 2005-12-21 2005-12-21 Bulk single crystal material and method of growth

Country Status (1)

Country Link
GB (1) GB2433447A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10358376B2 (en) * 2014-03-06 2019-07-23 Brown University Method and apparatus for creating coherent bundle of scintillating fibers
US10399887B2 (en) 2014-03-06 2019-09-03 Brown University Method and apparatus for creating coherent bundle of scintillating fibers

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61205693A (en) * 1985-03-07 1986-09-11 Nec Corp Crystal growth
US4699688A (en) * 1986-07-14 1987-10-13 Gte Laboratories Incorporated Method of epitaxially growing gallium arsenide on silicon
JP3728465B2 (en) * 1994-11-25 2005-12-21 株式会社神戸製鋼所 Method for forming single crystal diamond film
ATE528421T1 (en) * 2000-11-30 2011-10-15 Univ North Carolina State METHOD FOR PRODUCING GROUP III METAL NITRIDE MATERIALS
US20030024471A1 (en) * 2001-08-06 2003-02-06 Motorola, Inc. Fabrication of semiconductor structures and devices forms by utilizing laser assisted deposition
US20030034500A1 (en) * 2001-08-15 2003-02-20 Motorola, Inc. Semiconductor structure including a zintl material buffer layer, device including the structure, and method of forming the structure and device

Also Published As

Publication number Publication date
GB2433447A (en) 2007-06-27

Similar Documents

Publication Publication Date Title
EP1937876A4 (en) System and method for crystal growing
EP1860213A4 (en) Method and apparatus for producing group iii nitride crystal
EP1965712A4 (en) Apparatus and method for introducing implants
PL1871532T3 (en) Process and apparatus for forming uniform nanofiber substrates
EP1948517A4 (en) Method and apparatus for sterilization
HUE042073T2 (en) Method and apparatus for producing isocyanates
EP1813700A4 (en) Apparatus for crystal production
EP1969419A4 (en) Flexible display apparatus and method for producing the same
EP1888802A4 (en) Method and apparatus for growing single-crystal metals
GB0610606D0 (en) Process and apparatus
GB0503634D0 (en) Apparatus and process for crystal growth
GB0501688D0 (en) Method and apparatus
GB0506186D0 (en) Apparatus and method
EP1881094B8 (en) Process and apparatus for producing group iii element nitride crystal
EP1870457A4 (en) Dipeptide crystals and process for production thereof
EP2302109A4 (en) Crystal growing apparatus and crystal growing method
EP1757716A4 (en) Method and apparatus for preparing crystal
EP2071060A4 (en) Single crystal manufacturing apparatus and method
EP1944383A4 (en) PROCESS FOR PRODUCING Ti AND APPARATUS THEREFOR
GB0508695D0 (en) Apparatus and method
GB0502318D0 (en) Apparatus and method
EP1807555A4 (en) Crystal growth method and apparatus
GB0526073D0 (en) Apparatus and process for crystal growth
GB0409787D0 (en) Method and apparatus for growing plants
GB0504469D0 (en) Method and apparatus

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)