GB0526070D0 - Device - Google Patents

Device

Info

Publication number
GB0526070D0
GB0526070D0 GBGB0526070.8A GB0526070A GB0526070D0 GB 0526070 D0 GB0526070 D0 GB 0526070D0 GB 0526070 A GB0526070 A GB 0526070A GB 0526070 D0 GB0526070 D0 GB 0526070D0
Authority
GB
United Kingdom
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB0526070.8A
Other versions
GB2435715A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Durham Scientific Crystals Ltd
Original Assignee
Durham Scientific Crystals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Durham Scientific Crystals Ltd filed Critical Durham Scientific Crystals Ltd
Priority to GB0526070A priority Critical patent/GB2435715A/en
Publication of GB0526070D0 publication Critical patent/GB0526070D0/en
Priority to US12/158,114 priority patent/US20090053453A1/en
Priority to EP06831438.4A priority patent/EP1969622B1/en
Priority to JP2008546618A priority patent/JP5662001B2/en
Priority to PCT/GB2006/004864 priority patent/WO2007072023A1/en
Publication of GB2435715A publication Critical patent/GB2435715A/en
Priority to US12/901,780 priority patent/US8968469B2/en
Withdrawn legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02Epitaxial-layer growth
    • C30B23/025Epitaxial-layer growth characterised by the substrate
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/18Epitaxial-layer growth characterised by the substrate
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/46Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02455Group 13/15 materials
    • H01L21/02461Phosphides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02469Group 12/16 materials
    • H01L21/02474Sulfides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/02546Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02551Group 12/16 materials
    • H01L21/0256Selenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • H01L21/2053
    • H01L21/2056
    • H01L21/365

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
GB0526070A 2005-12-21 2005-12-21 Vapour phase epitaxial growth of thick II-VI semiconductor crystals Withdrawn GB2435715A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB0526070A GB2435715A (en) 2005-12-21 2005-12-21 Vapour phase epitaxial growth of thick II-VI semiconductor crystals
US12/158,114 US20090053453A1 (en) 2005-12-21 2006-12-21 Semiconductor device and method of manufacture thereof
EP06831438.4A EP1969622B1 (en) 2005-12-21 2006-12-21 Semiconductor device and method of manufacture thereof
JP2008546618A JP5662001B2 (en) 2005-12-21 2006-12-21 Semiconductor device and manufacturing method thereof
PCT/GB2006/004864 WO2007072023A1 (en) 2005-12-21 2006-12-21 Semiconductor device and method of manufacture thereof
US12/901,780 US8968469B2 (en) 2005-12-21 2010-10-11 Semiconductor device and method of manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0526070A GB2435715A (en) 2005-12-21 2005-12-21 Vapour phase epitaxial growth of thick II-VI semiconductor crystals

Publications (2)

Publication Number Publication Date
GB0526070D0 true GB0526070D0 (en) 2006-02-01
GB2435715A GB2435715A (en) 2007-09-05

Family

ID=35840922

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0526070A Withdrawn GB2435715A (en) 2005-12-21 2005-12-21 Vapour phase epitaxial growth of thick II-VI semiconductor crystals

Country Status (1)

Country Link
GB (1) GB2435715A (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6218280B1 (en) * 1998-06-18 2001-04-17 University Of Florida Method and apparatus for producing group-III nitrides
KR20010058673A (en) * 1999-12-30 2001-07-06 이형도 Method for growing a crack free GaN thick film by hydride vapor phase epitaxy
JP3968968B2 (en) * 2000-07-10 2007-08-29 住友電気工業株式会社 Manufacturing method of single crystal GaN substrate
AU2002219978A1 (en) * 2000-11-30 2002-06-11 Kyma Technologies, Inc. Method and apparatus for producing miiin columns and miiin materials grown thereon
US20060011135A1 (en) * 2001-07-06 2006-01-19 Dmitriev Vladimir A HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run
KR100718188B1 (en) * 2004-05-07 2007-05-15 삼성코닝 주식회사 Non-polar single crystalline a-plane nitride semiconductor wafer and preparation thereof

Also Published As

Publication number Publication date
GB2435715A (en) 2007-09-05

Similar Documents

Publication Publication Date Title
ZA200806011B (en) Compression-distraction device
GB0521472D0 (en) Device
EP1888875A4 (en) Packer-anchoring device
GB0519472D0 (en) Device
GB0510057D0 (en) Novel device
EP1965848A4 (en) New device
GB0500575D0 (en) Novel device
GB0505013D0 (en) Device
GB0617951D0 (en) Device
GB0521471D0 (en) Device
GB0521474D0 (en) Device
GB0511943D0 (en) Device
GB0520045D0 (en) Anti-tailgate device
GB0510779D0 (en) Novel device
GB0524805D0 (en) Cricothyroidotomy device
GB2431352B (en) Device
EP1954554A4 (en) Retaining device
GB2426444B (en) Monitor-holding device
GB0521468D0 (en) Device
TWM291803U (en) ice-therapy device
GB0518201D0 (en) Device
IL166541A0 (en) Device
GB0518056D0 (en) Device
GB0507059D0 (en) Device
GB0511352D0 (en) Device

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)