GB0510734D0 - Exchange coupling film and magnetic detecting element using the exchange coupling film - Google Patents

Exchange coupling film and magnetic detecting element using the exchange coupling film

Info

Publication number
GB0510734D0
GB0510734D0 GBGB0510734.7A GB0510734A GB0510734D0 GB 0510734 D0 GB0510734 D0 GB 0510734D0 GB 0510734 A GB0510734 A GB 0510734A GB 0510734 D0 GB0510734 D0 GB 0510734D0
Authority
GB
United Kingdom
Prior art keywords
exchange coupling
coupling film
detecting element
magnetic detecting
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB0510734.7A
Other versions
GB2411516A (en
GB2411516B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002120808A external-priority patent/JP2003318463A/en
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Publication of GB0510734D0 publication Critical patent/GB0510734D0/en
Publication of GB2411516A publication Critical patent/GB2411516A/en
Application granted granted Critical
Publication of GB2411516B publication Critical patent/GB2411516B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H01F10/3277—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets by use of artificial ferrimagnets [AFI] only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3218—Exchange coupling of magnetic films via an antiferromagnetic interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H01F41/325—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film applying a noble metal capping on a spin-exchange-coupled multilayer, e.g. spin filter deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
GB0510734A 2002-04-23 2003-04-17 Exchange coupling film and magnetic detecting element using the exchange coupling film Expired - Fee Related GB2411516B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002120808A JP2003318463A (en) 2002-04-23 2002-04-23 Exchange coupling film, method for manufacturing exchange coupling film and magnetism detection element using exchange coupling film
GB0308884A GB2387958B (en) 2002-04-23 2003-04-17 Exchange coupling film and magnetic detecting element using the exchange coupling film

Publications (3)

Publication Number Publication Date
GB0510734D0 true GB0510734D0 (en) 2005-06-29
GB2411516A GB2411516A (en) 2005-08-31
GB2411516B GB2411516B (en) 2005-11-09

Family

ID=34828665

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0510734A Expired - Fee Related GB2411516B (en) 2002-04-23 2003-04-17 Exchange coupling film and magnetic detecting element using the exchange coupling film

Country Status (1)

Country Link
GB (1) GB2411516B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111615636A (en) * 2018-01-17 2020-09-01 阿尔卑斯阿尔派株式会社 Magnetic detection device and method for manufacturing the same
US10770213B2 (en) * 2017-01-02 2020-09-08 Imec Vzw Magnetoresistive device comprising chromium

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005050842A (en) * 2003-07-29 2005-02-24 Alps Electric Co Ltd Exchange bonding film, its forming method and magnetic detection element employing it
US8710603B2 (en) * 2012-02-29 2014-04-29 Headway Technologies, Inc. Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI222630B (en) * 2001-04-24 2004-10-21 Matsushita Electric Ind Co Ltd Magnetoresistive element and magnetoresistive memory device using the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10770213B2 (en) * 2017-01-02 2020-09-08 Imec Vzw Magnetoresistive device comprising chromium
CN111615636A (en) * 2018-01-17 2020-09-01 阿尔卑斯阿尔派株式会社 Magnetic detection device and method for manufacturing the same
CN111615636B (en) * 2018-01-17 2022-07-08 阿尔卑斯阿尔派株式会社 Magnetic detection device and method for manufacturing the same

Also Published As

Publication number Publication date
GB2411516A (en) 2005-08-31
GB2411516B (en) 2005-11-09

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20130417