GB0320985D0 - Protection device with a silicon-controlled rectifier - Google Patents
Protection device with a silicon-controlled rectifierInfo
- Publication number
- GB0320985D0 GB0320985D0 GBGB0320985.5A GB0320985A GB0320985D0 GB 0320985 D0 GB0320985 D0 GB 0320985D0 GB 0320985 A GB0320985 A GB 0320985A GB 0320985 D0 GB0320985 D0 GB 0320985D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon
- protection device
- controlled rectifier
- rectifier
- controlled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
- H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20000046681 | 2000-08-11 | ||
| KR10-2001-0019975A KR100407574B1 (en) | 2000-08-11 | 2001-04-13 | Protection device with a silicon-controlled rectifier |
| GB0116024A GB2368975B (en) | 2000-08-11 | 2001-07-02 | Protection device with a silicon-controlled rectifier |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB0320985D0 true GB0320985D0 (en) | 2003-10-08 |
| GB2394833A GB2394833A (en) | 2004-05-05 |
| GB2394833B GB2394833B (en) | 2005-03-16 |
Family
ID=32073906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0320985A Expired - Lifetime GB2394833B (en) | 2000-08-11 | 2001-07-02 | Protection device with a silicon controlled rectifier |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2394833B (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60152055A (en) * | 1984-01-20 | 1985-08-10 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| US5465189A (en) * | 1990-03-05 | 1995-11-07 | Texas Instruments Incorporated | Low voltage triggering semiconductor controlled rectifiers |
| US5576557A (en) * | 1995-04-14 | 1996-11-19 | United Microelectronics Corp. | Complementary LVTSCR ESD protection circuit for sub-micron CMOS integrated circuits |
| US5898205A (en) * | 1997-07-11 | 1999-04-27 | Taiwan Semiconductor Manufacturing Co. Ltd. | Enhanced ESD protection circuitry |
-
2001
- 2001-07-02 GB GB0320985A patent/GB2394833B/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| GB2394833A (en) | 2004-05-05 |
| GB2394833B (en) | 2005-03-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PE20 | Patent expired after termination of 20 years |
Expiry date: 20210701 |