GB0205110D0 - Proximity quantum well intermixing - Google Patents

Proximity quantum well intermixing

Info

Publication number
GB0205110D0
GB0205110D0 GB0205110A GB0205110A GB0205110D0 GB 0205110 D0 GB0205110 D0 GB 0205110D0 GB 0205110 A GB0205110 A GB 0205110A GB 0205110 A GB0205110 A GB 0205110A GB 0205110 D0 GB0205110 D0 GB 0205110D0
Authority
GB
United Kingdom
Prior art keywords
proximity
quantum well
well intermixing
intermixing
quantum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0205110A
Other versions
GB2386249A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DenseLight Semiconductors Pte Ltd
Original Assignee
DenseLight Semiconductors Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DenseLight Semiconductors Pte Ltd filed Critical DenseLight Semiconductors Pte Ltd
Priority to GB0205110A priority Critical patent/GB2386249A/en
Publication of GB0205110D0 publication Critical patent/GB0205110D0/en
Publication of GB2386249A publication Critical patent/GB2386249A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
    • G02B6/1347—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2068—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by radiation treatment or annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
GB0205110A 2002-03-05 2002-03-05 Proximity quantum well intermixing Withdrawn GB2386249A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0205110A GB2386249A (en) 2002-03-05 2002-03-05 Proximity quantum well intermixing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0205110A GB2386249A (en) 2002-03-05 2002-03-05 Proximity quantum well intermixing

Publications (2)

Publication Number Publication Date
GB0205110D0 true GB0205110D0 (en) 2002-04-17
GB2386249A GB2386249A (en) 2003-09-10

Family

ID=9932291

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0205110A Withdrawn GB2386249A (en) 2002-03-05 2002-03-05 Proximity quantum well intermixing

Country Status (1)

Country Link
GB (1) GB2386249A (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5145792A (en) * 1988-05-23 1992-09-08 Optical Measurement Technology Development Co., Ltd. Method of fabricating a semiconductor optical device
US5238868A (en) * 1989-11-30 1993-08-24 Gte Laboratories Incorporated Bandgap tuning of semiconductor quantum well structures
US5766981A (en) * 1995-01-04 1998-06-16 Xerox Corporation Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD
JP3725582B2 (en) * 1995-07-05 2005-12-14 三菱電機株式会社 Semiconductor laser device manufacturing method and semiconductor laser device
WO2001067569A1 (en) * 2000-03-08 2001-09-13 Nanyang Technological University Plasma based process for photonic integration
US6878562B2 (en) * 2000-10-20 2005-04-12 Phosistor Technologies, Incorporated Method for shifting the bandgap energy of a quantum well layer

Also Published As

Publication number Publication date
GB2386249A (en) 2003-09-10

Similar Documents

Publication Publication Date Title
DE60336807D1 (en) Hepatitis-c-virus-hemmer
EP1466407A4 (en) Modulator- amplifier
IL150834A0 (en) Quantum well intermixing
GB0212891D0 (en) Jewllery case
DE60224584D1 (en) Rotationsdämpfer
AU2003290818A8 (en) Topoisomerase-targeting agents
GB0322041D0 (en) Cast-cutter
ZA200410369B (en) Modified phytases
GB2388150B (en) Latch
GB0310123D0 (en) Airfreshener combined luminair
EP1574568A4 (en) D-aminoacylase
PT1562958E (en) N-sulfonylaminothiazole
GB0205110D0 (en) Proximity quantum well intermixing
GB0223783D0 (en) Didgeridoo manufacture
EP1574454A4 (en) Case
EP1564156A4 (en) Case
PL113610U1 (en) Expansion-lock pin
PL113118U1 (en) Triple-sided middle section
GB0213077D0 (en) Concept nine
GB0210565D0 (en) Concept three
TW549032U (en) Toothbrush with luminous function
GB0521143D0 (en) Transition fitting
GB0521142D0 (en) Transition fitting
GB0213078D0 (en) Concept ten
GB0208981D0 (en) Panick case

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)