GB0205033D0 - A semiconductor memory device - Google Patents

A semiconductor memory device

Info

Publication number
GB0205033D0
GB0205033D0 GBGB0205033.4A GB0205033A GB0205033D0 GB 0205033 D0 GB0205033 D0 GB 0205033D0 GB 0205033 A GB0205033 A GB 0205033A GB 0205033 D0 GB0205033 D0 GB 0205033D0
Authority
GB
United Kingdom
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB0205033.4A
Other versions
GB2369910B (en
GB2369910A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019970065906A external-priority patent/KR100252053B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB0205033D0 publication Critical patent/GB0205033D0/en
Publication of GB2369910A publication Critical patent/GB2369910A/en
Application granted granted Critical
Publication of GB2369910B publication Critical patent/GB2369910B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/848—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by adjacent switching
GB0205033A 1997-12-04 1998-05-22 Faulty cell repairing method for a semiconductor memory device Expired - Fee Related GB2369910B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019970065906A KR100252053B1 (en) 1997-12-04 1997-12-04 Semiconductor memory device having column direction data in-out line and fail cell reparing circuit and method thereof
GB9811155A GB2332292B (en) 1997-12-04 1998-05-22 A semiconductor memory device

Publications (3)

Publication Number Publication Date
GB0205033D0 true GB0205033D0 (en) 2002-04-17
GB2369910A GB2369910A (en) 2002-06-12
GB2369910B GB2369910B (en) 2002-08-28

Family

ID=26313733

Family Applications (2)

Application Number Title Priority Date Filing Date
GB0205031A Expired - Fee Related GB2369909B (en) 1997-12-04 1998-05-22 Faulty cell repairing method for a semiconductor memory
GB0205033A Expired - Fee Related GB2369910B (en) 1997-12-04 1998-05-22 Faulty cell repairing method for a semiconductor memory device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB0205031A Expired - Fee Related GB2369909B (en) 1997-12-04 1998-05-22 Faulty cell repairing method for a semiconductor memory

Country Status (1)

Country Link
GB (2) GB2369909B (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2842923B2 (en) * 1990-03-19 1999-01-06 株式会社アドバンテスト Semiconductor memory test equipment
JP2777276B2 (en) * 1990-09-20 1998-07-16 株式会社東芝 Test device for memory IC with redundant circuit
KR0130030B1 (en) * 1994-08-25 1998-10-01 김광호 Column redundancy circuit and method for semiconductor memory device

Also Published As

Publication number Publication date
GB2369910B (en) 2002-08-28
GB2369909B (en) 2002-08-28
GB2369909A (en) 2002-06-12
GB0205031D0 (en) 2002-04-17
GB2369910A (en) 2002-06-12

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20090522