GB0110091D0 - Nucleation-inducing material - Google Patents

Nucleation-inducing material

Info

Publication number
GB0110091D0
GB0110091D0 GBGB0110091.6A GB0110091A GB0110091D0 GB 0110091 D0 GB0110091 D0 GB 0110091D0 GB 0110091 A GB0110091 A GB 0110091A GB 0110091 D0 GB0110091 D0 GB 0110091D0
Authority
GB
United Kingdom
Prior art keywords
nucleation
inducing material
inducing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0110091.6A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ip2ipo Innovations Ltd
Technion Israel Institute of Technology
Original Assignee
Imperial College Innovations Ltd
Technion Israel Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imperial College Innovations Ltd, Technion Israel Institute of Technology filed Critical Imperial College Innovations Ltd
Priority to GBGB0110091.6A priority Critical patent/GB0110091D0/en
Publication of GB0110091D0 publication Critical patent/GB0110091D0/en
Priority to PCT/GB2002/001921 priority patent/WO2002088435A1/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54—Organic compounds
    • C30B29/58—Macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
GBGB0110091.6A 2001-04-25 2001-04-25 Nucleation-inducing material Ceased GB0110091D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GBGB0110091.6A GB0110091D0 (en) 2001-04-25 2001-04-25 Nucleation-inducing material
PCT/GB2002/001921 WO2002088435A1 (en) 2001-04-25 2002-04-25 Nucleation-inducing material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0110091.6A GB0110091D0 (en) 2001-04-25 2001-04-25 Nucleation-inducing material

Publications (1)

Publication Number Publication Date
GB0110091D0 true GB0110091D0 (en) 2001-06-20

Family

ID=9913402

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0110091.6A Ceased GB0110091D0 (en) 2001-04-25 2001-04-25 Nucleation-inducing material

Country Status (2)

Country Link
GB (1) GB0110091D0 (en)
WO (1) WO2002088435A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0225980D0 (en) * 2002-11-07 2002-12-11 Imp College Innovations Ltd Crystallisation nucleant
US10175183B2 (en) 2011-03-31 2019-01-08 Kunimine Industries Co., Ltd. Agent for searching for protein crystallization conditions and method of searching for protein crystallization conditions
FR3045606B1 (en) 2015-12-18 2019-04-05 Ecole Normale Superieure De Lyon LANTHANIDE COMPLEXES FOR CRYSTALLIZING BIOLOGICAL MACROMOLECULES AND DETERMINING THEIR CRYSTALLOGRAPHIC STRUCTURE
FR3065883A1 (en) 2017-05-06 2018-11-09 Polyvalan Sas NOVEL METAL ION COMPLEXES FOR CRYSTALLIZING BIOLOGICAL MACROMOLECULES AND DETERMINING THEIR CRYSTALLOGRAPHIC STRUCTURE
WO2022204906A1 (en) * 2021-03-30 2022-10-06 深圳先进技术研究院 Protein crystallization nucleating agent and preparation method for protein crystallization nucleating agent

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2751330A (en) * 1952-08-27 1956-06-19 Armour & Co Use of a salt in the extraction slurry in recovering proteolytic enzymes from pancreas gland material
JPS6019991B2 (en) * 1982-06-02 1985-05-18 キユーピー株式会社 Method for crystallizing egg white lysozyme
US6171512B1 (en) * 1991-02-15 2001-01-09 Canon Kabushiki Kaisha Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution
EP0909841A4 (en) * 1996-06-26 2001-12-19 Sumitomo Metal Ind Crystal-growing method and solid element and device for crystal growth used in the method
US6277662B1 (en) * 1999-06-03 2001-08-21 Seiichi Nagata Silicon substrate and forming method thereof

Also Published As

Publication number Publication date
WO2002088435A1 (en) 2002-11-07

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)