GB0030595D0 - Semiconductor device layout - Google Patents

Semiconductor device layout

Info

Publication number
GB0030595D0
GB0030595D0 GBGB0030595.3A GB0030595A GB0030595D0 GB 0030595 D0 GB0030595 D0 GB 0030595D0 GB 0030595 A GB0030595 A GB 0030595A GB 0030595 D0 GB0030595 D0 GB 0030595D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
device layout
layout
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0030595.3A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Priority to GBGB0030595.3A priority Critical patent/GB0030595D0/en
Publication of GB0030595D0 publication Critical patent/GB0030595D0/en
Priority to EP01988015A priority patent/EP1346415A2/en
Priority to PCT/EP2001/014209 priority patent/WO2002049076A2/en
Priority to JP2002550292A priority patent/JP4194841B2/en
Priority to KR1020027010619A priority patent/KR20020084139A/en
Priority to US10/015,711 priority patent/US6629303B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Element Separation (AREA)
GBGB0030595.3A 2000-12-15 2000-12-15 Semiconductor device layout Ceased GB0030595D0 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GBGB0030595.3A GB0030595D0 (en) 2000-12-15 2000-12-15 Semiconductor device layout
EP01988015A EP1346415A2 (en) 2000-12-15 2001-11-29 Semiconductor device layout
PCT/EP2001/014209 WO2002049076A2 (en) 2000-12-15 2001-11-29 Semiconductor device layout
JP2002550292A JP4194841B2 (en) 2000-12-15 2001-11-29 Semiconductor device layout
KR1020027010619A KR20020084139A (en) 2000-12-15 2001-11-29 Semiconductor device layout
US10/015,711 US6629303B2 (en) 2000-12-15 2001-11-30 Semiconductor device layout

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0030595.3A GB0030595D0 (en) 2000-12-15 2000-12-15 Semiconductor device layout

Publications (1)

Publication Number Publication Date
GB0030595D0 true GB0030595D0 (en) 2001-01-31

Family

ID=9905139

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0030595.3A Ceased GB0030595D0 (en) 2000-12-15 2000-12-15 Semiconductor device layout

Country Status (6)

Country Link
US (1) US6629303B2 (en)
EP (1) EP1346415A2 (en)
JP (1) JP4194841B2 (en)
KR (1) KR20020084139A (en)
GB (1) GB0030595D0 (en)
WO (1) WO2002049076A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4387119B2 (en) * 2003-03-27 2009-12-16 三菱電機株式会社 Semiconductor device
US20080201677A1 (en) * 2007-02-21 2008-08-21 Faye Baker Integrated Circuit (IC) Chip Input/Output (I/O) Cell Design Optimization Method And IC chip With Optimized I/O Cells
KR101044295B1 (en) * 2010-01-07 2011-06-28 주식회사 엔타시스 A method and apparatus to pack neighbor blocks and cells during the automatic chip level layout compaction
JP2012069884A (en) * 2010-09-27 2012-04-05 Sanken Electric Co Ltd Semiconductor module design method and semiconductor module

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2382093A2 (en) * 1973-03-09 1978-09-22 Thomson Csf PIN semiconductor element fabrication - uses highly doped support layer and etching of grooves
US4281448A (en) * 1980-04-14 1981-08-04 Gte Laboratories Incorporated Method of fabricating a diode bridge rectifier in monolithic integrated circuit structure utilizing isolation diffusions and metal semiconductor rectifying barrier diode formation
JPS59220947A (en) * 1983-05-30 1984-12-12 Sharp Corp Manufacture of semiconductor device
US4542397A (en) * 1984-04-12 1985-09-17 Xerox Corporation Self aligning small scale integrated circuit semiconductor chips to form large area arrays
JPH0766975B2 (en) * 1988-12-09 1995-07-19 サンケン電気株式会社 Compound diode device
US5340772A (en) * 1992-07-17 1994-08-23 Lsi Logic Corporation Method of increasing the layout efficiency of dies on a wafer and increasing the ratio of I/O area to active area per die
US6170080B1 (en) * 1997-08-29 2001-01-02 Vlsi Technology, Inc. Method and system for floorplanning a circuit design at a high level of abstraction
US6229163B1 (en) * 1998-11-20 2001-05-08 Fairchild Semiconductor Corp. Very high aspect ratio semiconductor devices using fractal based topologies

Also Published As

Publication number Publication date
KR20020084139A (en) 2002-11-04
EP1346415A2 (en) 2003-09-24
US20020110959A1 (en) 2002-08-15
WO2002049076A3 (en) 2002-11-14
WO2002049076A2 (en) 2002-06-20
JP4194841B2 (en) 2008-12-10
JP2004516650A (en) 2004-06-03
US6629303B2 (en) 2003-09-30

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)