FR93763E - Improvements to semiconductor devices known as multibandon tecnetrons. - Google Patents

Improvements to semiconductor devices known as multibandon tecnetrons.

Info

Publication number
FR93763E
FR93763E FR124739A FR124739A FR93763E FR 93763 E FR93763 E FR 93763E FR 124739 A FR124739 A FR 124739A FR 124739 A FR124739 A FR 124739A FR 93763 E FR93763 E FR 93763E
Authority
FR
France
Prior art keywords
tecnetrons
multibandon
semiconductor devices
devices known
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR124739A
Other languages
French (fr)
Inventor
Teszner Stanislas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR882222A external-priority patent/FR1317256A/en
Priority claimed from FR110177A external-priority patent/FR93111E/en
Priority to FR124739A priority Critical patent/FR93763E/en
Application filed by Individual filed Critical Individual
Priority to FR130477A priority patent/FR93857E/en
Priority to FR144708A priority patent/FR94388E/en
Priority to US736233A priority patent/US3497777A/en
Priority to BE716419D priority patent/BE716419A/xx
Priority to GB27981/68A priority patent/GB1161049A/en
Priority to NL6808325A priority patent/NL6808325A/xx
Priority to CH881468A priority patent/CH493094A/en
Priority to DE1764491A priority patent/DE1764491C3/en
Publication of FR93763E publication Critical patent/FR93763E/en
Application granted granted Critical
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
FR124739A 1961-12-16 1967-10-17 Improvements to semiconductor devices known as multibandon tecnetrons. Expired FR93763E (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR124739A FR93763E (en) 1961-12-16 1967-10-17 Improvements to semiconductor devices known as multibandon tecnetrons.
FR130477A FR93857E (en) 1961-12-16 1967-11-30 Improvements to so-called multibandon teenetrons semiconductor devices.
FR144708A FR94388E (en) 1961-12-16 1968-03-21 Improvements to so-called multibandon tecnetron semiconductor devices.
US736233A US3497777A (en) 1967-06-13 1968-06-11 Multichannel field-effect semi-conductor device
BE716419D BE716419A (en) 1967-06-13 1968-06-12
GB27981/68A GB1161049A (en) 1967-06-13 1968-06-12 Field-effect semiconductor devices.
NL6808325A NL6808325A (en) 1967-06-13 1968-06-13
CH881468A CH493094A (en) 1967-06-13 1968-06-13 Multichannel Field Effect Semiconductor Device
DE1764491A DE1764491C3 (en) 1967-06-13 1968-06-14 Multi-channel field effect semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR882222A FR1317256A (en) 1961-12-16 1961-12-16 Improvements to semiconductor devices known as multibrand tecnetrons
FR110177A FR93111E (en) 1961-12-16 1967-06-13 Improvements to so-called multibandon tecnetron semiconductor devices.
FR124739A FR93763E (en) 1961-12-16 1967-10-17 Improvements to semiconductor devices known as multibandon tecnetrons.

Publications (1)

Publication Number Publication Date
FR93763E true FR93763E (en) 1969-05-16

Family

ID=38861022

Family Applications (1)

Application Number Title Priority Date Filing Date
FR124739A Expired FR93763E (en) 1961-12-16 1967-10-17 Improvements to semiconductor devices known as multibandon tecnetrons.

Country Status (1)

Country Link
FR (1) FR93763E (en)

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Legal Events

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CA Change of address
CD Change of name or company name
CL Concession to grant licences
CL Concession to grant licences