FR93695E - A method of epitaxial deposition in liquid phase of gallium arsenide. - Google Patents

A method of epitaxial deposition in liquid phase of gallium arsenide.

Info

Publication number
FR93695E
FR93695E FR134422A FR134422A FR93695E FR 93695 E FR93695 E FR 93695E FR 134422 A FR134422 A FR 134422A FR 134422 A FR134422 A FR 134422A FR 93695 E FR93695 E FR 93695E
Authority
FR
France
Prior art keywords
liquid phase
gallium arsenide
epitaxial deposition
epitaxial
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR134422A
Other languages
French (fr)
Inventor
Jean-Marc Le Duc
Elie Andre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RADIOTECHNIQUE COPRIM RTC
Original Assignee
RADIOTECHNIQUE COPRIM RTC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR125281A external-priority patent/FR1552004A/fr
Application filed by RADIOTECHNIQUE COPRIM RTC filed Critical RADIOTECHNIQUE COPRIM RTC
Priority to FR134422A priority Critical patent/FR93695E/en
Priority to GB49228/68A priority patent/GB1242410A/en
Priority to SE14025/68A priority patent/SE338761B/xx
Priority to CH1556368A priority patent/CH532959A/en
Priority to DE1803731A priority patent/DE1803731C3/en
Priority to NL6815008A priority patent/NL6815008A/xx
Priority to BE722667D priority patent/BE722667A/xx
Priority to US769319A priority patent/US3632431A/en
Priority to CA033033A priority patent/CA920484A/en
Publication of FR93695E publication Critical patent/FR93695E/en
Application granted granted Critical
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR134422A 1967-10-20 1967-12-29 A method of epitaxial deposition in liquid phase of gallium arsenide. Expired FR93695E (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR134422A FR93695E (en) 1967-10-20 1967-12-29 A method of epitaxial deposition in liquid phase of gallium arsenide.
GB49228/68A GB1242410A (en) 1967-10-20 1968-10-17 Method of crystallizing a binary semiconductor compound
SE14025/68A SE338761B (en) 1967-10-20 1968-10-17
CH1556368A CH532959A (en) 1967-10-20 1968-10-17 Process for crystallizing a binary semiconductor compound
DE1803731A DE1803731C3 (en) 1967-10-20 1968-10-18 Process for crystallizing a binary semiconductor compound
NL6815008A NL6815008A (en) 1967-10-20 1968-10-19
BE722667D BE722667A (en) 1967-10-20 1968-10-21
US769319A US3632431A (en) 1967-10-20 1968-10-21 Method of crystallizing a binary semiconductor compound
CA033033A CA920484A (en) 1967-10-20 1968-10-21 Method of crystallizing a binary semiconductor compound

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR125281A FR1552004A (en) 1967-10-20 1967-10-20
FR134422A FR93695E (en) 1967-10-20 1967-12-29 A method of epitaxial deposition in liquid phase of gallium arsenide.

Publications (1)

Publication Number Publication Date
FR93695E true FR93695E (en) 1969-05-02

Family

ID=26180184

Family Applications (1)

Application Number Title Priority Date Filing Date
FR134422A Expired FR93695E (en) 1967-10-20 1967-12-29 A method of epitaxial deposition in liquid phase of gallium arsenide.

Country Status (1)

Country Link
FR (1) FR93695E (en)

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