FR91476E - Controlled rectifier element comprising a semiconductor in principle monocrystalline with a succession of pn-pn layers - Google Patents
Controlled rectifier element comprising a semiconductor in principle monocrystalline with a succession of pn-pn layersInfo
- Publication number
- FR91476E FR91476E FR77886A FR77886A FR91476E FR 91476 E FR91476 E FR 91476E FR 77886 A FR77886 A FR 77886A FR 77886 A FR77886 A FR 77886A FR 91476 E FR91476 E FR 91476E
- Authority
- FR
- France
- Prior art keywords
- monocrystalline
- succession
- semiconductor
- layers
- principle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR77886A FR91476E (en) | 1963-08-03 | 1966-09-28 | Controlled rectifier element comprising a semiconductor in principle monocrystalline with a succession of pn-pn layers |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1963S0086530 DE1234326B (en) | 1963-08-03 | 1963-08-03 | Controllable rectifier with a monocrystalline semiconductor body and four zones of alternating conduction types |
| DE1964S0090194 DE1261603B (en) | 1963-08-03 | 1964-03-25 | Controllable semiconductor component |
| DES0099845 | 1965-09-30 | ||
| FR77886A FR91476E (en) | 1963-08-03 | 1966-09-28 | Controlled rectifier element comprising a semiconductor in principle monocrystalline with a succession of pn-pn layers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR91476E true FR91476E (en) | 1968-06-21 |
Family
ID=27437564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR77886A Expired FR91476E (en) | 1963-08-03 | 1966-09-28 | Controlled rectifier element comprising a semiconductor in principle monocrystalline with a succession of pn-pn layers |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR91476E (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3579060A (en) * | 1969-03-21 | 1971-05-18 | Gen Electric | Thyristor with improved current and voltage handling characteristics |
-
1966
- 1966-09-28 FR FR77886A patent/FR91476E/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3579060A (en) * | 1969-03-21 | 1971-05-18 | Gen Electric | Thyristor with improved current and voltage handling characteristics |
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